Effect of non-abrupt doping and interfacial profiles on the carrier sheet density in one-side modulation-doped GaN/AlGaN quantum wells

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.creatorEnders Neto, Bernhard Georg-
Autor(es): dc.creatorLima, Fábio Menezes de Souza-
Autor(es): dc.creatorFonseca, Antonio Luciano de Almeida-
Autor(es): dc.creatorNunes, O. A. C.-
Autor(es): dc.creatorSilva Júnior, Eronides Felisberto da-
Data de aceite: dc.date.accessioned2024-10-23T15:29:50Z-
Data de disponibilização: dc.date.available2024-10-23T15:29:50Z-
Data de envio: dc.date.issued2010-12-10-
Data de envio: dc.date.issued2010-12-10-
Data de envio: dc.date.issued2009-04-
Fonte completa do material: dc.identifierhttp://repositorio.unb.br/handle/10482/6152-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/capes/884585-
Descrição: dc.descriptionThe results of an accurate theoretical study on the effects of non-abrupt doping and interfacial profiles on the electron sheet density in one-side modulation-doped wurtzite GaN/AlGaN single quantum wells at low temperatures are presented. We solve coupled Schr¨odinger and Poisson equations self-consistently via the finite difference method. By employing a proper discretization on a nonuniform grid and taking into account the strong piezoelectric and spontaneous polarization fields exhibited by the wurtzite III-nitride heterostructures, a substantial increase in the 2DEG density is predicted with the increase of the donor diffusion length and the reduction of the spacer thickness.-
Formato: dc.formatapplication/pdf-
Direitos: dc.rightsAcesso Aberto-
Palavras-chave: dc.subjectElétrons-
Palavras-chave: dc.subjectFísica quântica-
Título: dc.titleEffect of non-abrupt doping and interfacial profiles on the carrier sheet density in one-side modulation-doped GaN/AlGaN quantum wells-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional – UNB

Não existem arquivos associados a este item.