Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.creatorAmato, Angélica Amorim-
Data de aceite: dc.date.accessioned2021-10-14T18:03:31Z-
Data de disponibilização: dc.date.available2021-10-14T18:03:31Z-
Data de envio: dc.date.issued2017-12-07-
Data de envio: dc.date.issued2017-12-07-
Data de envio: dc.date.issued2002-
Fonte completa do material: dc.identifierhttp://repositorio.unb.br/handle/10482/25956-
Fonte completa do material: dc.identifierhttps://dx.doi.org/10.1590/S1806-11172002000400003-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/capes/622567-
Descrição: dc.descriptionIt is presented a simple model for the calculation of the transition rate for impurities in semiconductors in which electron-phonon interaction is taken into account in a second order time dependent perturbation theory. This result shows the explicit dependence of the transition rate on the phonon density of states and that the absorption curve of a semiconductor is modulated by the phonon structure.-
Formato: dc.formatapplication/pdf-
Idioma: dc.languageen-
Publicador: dc.publisherSociedade Brasileira de Física-
Direitos: dc.rightsAcesso Aberto-
Título: dc.titleLight Absorption near Threshold with Phonon Participation for Impurities in Semiconductors-
Tipo de arquivo: dc.typelivro digital-
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