Tuning the Schottky barrier height in graphene/monolayer-GeI2 van der Waals heterostructure

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Autor(es): dc.creatorDeus, Dominike Pacine de Andrade-
Autor(es): dc.creatorOliveira, Igor Saulo Santos de-
Data de aceite: dc.date.accessioned2026-02-09T12:40:32Z-
Data de disponibilização: dc.date.available2026-02-09T12:40:32Z-
Data de envio: dc.date.issued2020-08-27-
Data de envio: dc.date.issued2020-08-27-
Data de envio: dc.date.issued2020-05-
Fonte completa do material: dc.identifierhttps://repositorio.ufla.br/handle/1/42683-
Fonte completa do material: dc.identifierhttps://iopscience.iop.org/article/10.1088/1361-648X/ab8bf8-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/capes/1166048-
Descrição: dc.descriptionWe use first-principles simulations to investigate the structural and electronic properties of a heterostructure formed by graphene and monolayer GeI2 (m-GeI2). While graphene has been extensively studied in the last 15 years, m-GeI2 has been recently proposed to be a stable 2D semiconductor with a wide-band gap, Liu et al (2018 J. Phys. Chem. C 122 22137). By staking both structures we obtain a metal-semiconductor junction, with great potential for applications in the designing of new (opto)electronic devices. The results show that the graphene Dirac cone is preserved in the graphene/m-GeI2 heterostructure. We find that there are no chemical bonds at the graphene and m-GeI2 interface, thus the heterostructure interactions are ruled by van der Waals (vdW) forces. The interface between graphene and m-GeI2 results in a n-type Schottky contact. Furthermore, we show that a transition from n-type to p-type Schottky contact can be obtained by decreasing the interlayer distance. We also modulated the Schottky barrier heights by applying a perpendicular external electric field through the vdW heterostructure. In particular, positive values resulted in an increase of the n-type Schottky barrier height, while negative electric field values induced a transition from n-type to p-type Schottky contact. From our results, we show that m-GeI2 is an interesting material to design new electronic Schottky devices based on graphene vdW heterostructures.-
Idioma: dc.languageen-
Publicador: dc.publisherIOP Publishing-
Direitos: dc.rightsrestrictAccess-
???dc.source???: dc.sourceJournal of Physics: Condensed Matter-
Palavras-chave: dc.subjectMetal-semiconductor-
Palavras-chave: dc.subjectOptoelectronic devices-
Palavras-chave: dc.subjectElectronic Schottky devices-
Palavras-chave: dc.subjectBarreiras Schottky-
Palavras-chave: dc.subjectHeteroestruturas de grafeno-
Palavras-chave: dc.subjectDispositivos optoeletrônicos-
Palavras-chave: dc.subjectSemicondutores-
Título: dc.titleTuning the Schottky barrier height in graphene/monolayer-GeI2 van der Waals heterostructure-
Tipo de arquivo: dc.typeArtigo-
Aparece nas coleções:Repositório Institucional da Universidade Federal de Lavras (RIUFLA)

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