Mechanisms of ion detection for FET-sensors using FTO: role of cleaning process, pH sequence and electrical resistivity

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.creatorNascimento, Raphael Aparecido Sanches-
Autor(es): dc.creatorMulato, Marcelo-
Data de aceite: dc.date.accessioned2026-02-09T12:17:39Z-
Data de disponibilização: dc.date.available2026-02-09T12:17:39Z-
Data de envio: dc.date.issued2019-09-04-
Data de envio: dc.date.issued2019-09-04-
Data de envio: dc.date.issued2017-
Fonte completa do material: dc.identifierhttps://repositorio.ufla.br/handle/1/36574-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/capes/1158399-
Descrição: dc.descriptionThe use of FTO samples as an extended gate field effect transistor biosensor is presented. The FTO samples were produced by spray pyrolysis technique. The cleaning process is shown to have a fundamental importance for the final sensitivity of the samples when multiple re-usage is adopted. The role of electrical resistivity and morphology of the films are investigated. The influence of pH sequence of measurements from 2 to 12 is presented. Both increasing and decreasing the pH values sequence of measurements are compared. Electrical, morphological, time evolution and electrochemical experiments are correlated in the main discussion. A physical-chemical model is presented to explain the main mechanisms of charge adsorption and desorption. Parameters not commonly reported in the literature are proven to have fundamental importance in sensors behavior and characterization.-
Formato: dc.formatapplication/pdf-
Idioma: dc.languageen-
Direitos: dc.rightsAttribution 4.0 International-
Direitos: dc.rightsAttribution 4.0 International-
Direitos: dc.rightsacesso aberto-
Direitos: dc.rightshttp://creativecommons.org/licenses/by/4.0/-
Direitos: dc.rightshttp://creativecommons.org/licenses/by/4.0/-
???dc.source???: dc.sourceMaterials Research-
Palavras-chave: dc.subjectBiosensor-
Palavras-chave: dc.subjectFluorine Tin Oxide (FTO)-
Palavras-chave: dc.subjectpH sensor-
Palavras-chave: dc.subjectExtended Gate Field Effect Transistor (EGFET)-
Título: dc.titleMechanisms of ion detection for FET-sensors using FTO: role of cleaning process, pH sequence and electrical resistivity-
Tipo de arquivo: dc.typeArtigo-
Aparece nas coleções:Repositório Institucional da Universidade Federal de Lavras (RIUFLA)

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