Investigation of deep defects and their effects on the properties of NiO/𝛽-Ga2O3 heterojuncion diodes.

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Autor(es): dc.creatorAlmalki, Abdulaziz-
Autor(es): dc.creatorMadani, Labed-
Autor(es): dc.creatorSengouga, Nouredine-
Autor(es): dc.creatorAlhassan, Sultan-
Autor(es): dc.creatorAlotaibi, Saud-
Autor(es): dc.creatorAlhassni, Amra-
Autor(es): dc.creatorAlmunyif, Amjad-
Autor(es): dc.creatorChauhan, Jasbinder S.-
Autor(es): dc.creatorHenini, Mohamed-
Autor(es): dc.creatorGaleti, Helder Vinicius Avanço-
Autor(es): dc.creatorGobato, Yara Galvão-
Autor(es): dc.creatorGodoy, Marcio Peron Franco de-
Autor(es): dc.creatorAndrade, Marcelo Barbosa de-
Autor(es): dc.creatorSouto, Sérgio-
Autor(es): dc.creatorZhou, Hong-
Autor(es): dc.creatorWang, Boyan-
Autor(es): dc.creatorXiao, Ming-
Autor(es): dc.creatorQin, Yuan-
Autor(es): dc.creatorZhang, Yuhao-
Data de aceite: dc.date.accessioned2025-08-21T15:53:34Z-
Data de disponibilização: dc.date.available2025-08-21T15:53:34Z-
Data de envio: dc.date.issued2025-01-07-
Data de envio: dc.date.issued2025-01-07-
Data de envio: dc.date.issued2022-
Fonte completa do material: dc.identifierhttps://www.repositorio.ufop.br/handle/123456789/19393-
Fonte completa do material: dc.identifierhttps://doi.org/10.1016/j.mtelec.2023.100042-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/capes/1026715-
Descrição: dc.descriptionIn this study, the effect of rapid thermal annealing (RTA) on the electrical and optical properties of NiO/ 𝛽-Ga2O3 heterojunction diodes was investigated using capacitance-voltage, current-voltage, Deep Level Transient Spectroscopy (DLTS), Laplace DLTS, photoluminescence and micro-Raman spectroscopy techniques, and SILVACO TCAD numerical simulator. The NiO is designed to be lowly-doped, allowing for the NiO full depletion at zero bias and the study of properties of 𝛽-Ga2O3 and its interface with NiO. Micro-Raman results revealed good agree ment with the theoretical and experimental results reported in the literature. The photoluminescence intensity of the sample after RTA is five times higher than the fresh sample due to a rise in the density of gallium and oxygen vacancies (VGa + VO) in the annealed 𝛽-Ga2O3 samples. The current-voltage characteristics showed that annealed devices exhibited a lower ideality factor at room temperature and higher barrier height compared with fresh samples. The DLTS measurements demonstrated that the number of electrically active traps were different for the two samples. In particular, three and one electron traps were detected in fresh samples and annealed samples, respectively. SILVACO-TCAD was used to understand the distribution of the detected electron E2 trap (Ec-0.15 eV) in the fresh sample and the dominant transport mechanisms. A fairly good agreement between sim ulation and measurements was achieved considering a surface NiO acceptor density of about 1 × 1019 cm−3 and E2 trap depth into the surface of 𝛽-Ga2O3 layer of about 0.220 μm and the effect of the most observed Ec-0.75 eV trap level in 𝛽-Ga2O3. These results unveil comprehensive physics in NiO/𝛽-Ga2O3 heterojunction and suggest that RTA is an essential process for realizing high-performance NiO/𝛽-Ga2O3 devices.-
Formato: dc.formatapplication/pdf-
Idioma: dc.languageen-
Direitos: dc.rightsaberto-
Direitos: dc.rightsThis article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https:// creativecommons.org/licenses/by/ 4.0/). Fonte: PDF do artigo.-
Palavras-chave: dc.subjectNiO/𝛽-Ga2O3 heterojunction diodes-
Palavras-chave: dc.subjectDefects-
Palavras-chave: dc.subjectDeep level transient spectroscopy-
Palavras-chave: dc.subjectPhotoluminescence-
Palavras-chave: dc.subjectRaman-
Título: dc.titleInvestigation of deep defects and their effects on the properties of NiO/𝛽-Ga2O3 heterojuncion diodes.-
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