Deposition of thin cobalt films onto silicon by galvanostatic and potentiostatic techniques.

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Autor(es): dc.creatorManhabosco, Taíse Matte-
Autor(es): dc.creatorMuller, Iduvirges Lourdes-
Data de aceite: dc.date.accessioned2025-08-21T15:37:33Z-
Data de disponibilização: dc.date.available2025-08-21T15:37:33Z-
Data de envio: dc.date.issued2017-03-10-
Data de envio: dc.date.issued2017-03-10-
Data de envio: dc.date.issued2009-
Fonte completa do material: dc.identifierhttp://www.repositorio.ufop.br/handle/123456789/7349-
Fonte completa do material: dc.identifierhttps://link.springer.com/article/10.1007/s10853-009-3388-9-
Fonte completa do material: dc.identifierhttps://doi.org/10.1007/s10853-009-3388-9-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/capes/1020051-
Descrição: dc.descriptionIn this study, thin cobalt films were electrodeposited directly onto n-Si (100) using two different electrodeposition techniques: galvanostatic and potentiostatic. The morphological difference between galvanostatic and potentiostatic deposits was observed by atomic force microscopy (AFM) and X-ray diffraction (XRD). Analysis of the deposits by an alternating gradient field magnetometer (AGFM) showed the influence of the electrodeposition process on the magnetic properties of the film.-
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Idioma: dc.languageen-
Direitos: dc.rightsrestrito-
Título: dc.titleDeposition of thin cobalt films onto silicon by galvanostatic and potentiostatic techniques.-
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