Graphene/h-BN heterostructures under pressure : from van der Waals to covale.

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Autor(es): dc.creatorBarboza, Ana Paula Moreira-
Autor(es): dc.creatorSouza, Alan Custodio dos Reis-
Autor(es): dc.creatorMatos, Matheus Josué de Souza-
Autor(es): dc.creatorBrant, Juliana Caldeira-
Autor(es): dc.creatorBarbosa, Tiago Campolina-
Autor(es): dc.creatorChacham, Helio-
Autor(es): dc.creatorMazzoni, Mário Sérgio de Carvalho-
Autor(es): dc.creatorNeves, Bernardo Ruegger Almeida-
Data de aceite: dc.date.accessioned2025-08-21T15:37:29Z-
Data de disponibilização: dc.date.available2025-08-21T15:37:29Z-
Data de envio: dc.date.issued2020-08-13-
Data de envio: dc.date.issued2020-08-13-
Data de envio: dc.date.issued2019-
Fonte completa do material: dc.identifierhttp://www.repositorio.ufop.br/handle/123456789/12585-
Fonte completa do material: dc.identifierhttps://www.sciencedirect.com/science/article/abs/pii/S0008622319308632-
Fonte completa do material: dc.identifierhttps://doi.org/10.1016/j.carbon.2019.08.054-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/capes/1020029-
Descrição: dc.descriptionScanning probe microscopy and ab initio calculations reveal modifications on the electronic and structural properties of graphene/h-BN heterostructures induced by compression. Using AFM and EFM techniques, with charge injection being made in the heterostructures at different pressures, the charge injection efficiency monotonically decreases with increasing pressure for monolayer-graphene (MLG)+BN heterostructures, indicative of a conductor-insulator electronic transition. Bilayer-graphene (BLG)+BN and trilayer-graphene (TLG)+BN heterostructures show a non-monotonic behavior of charge injection versus pressure, indicative of competing electronic structure modifications. First-principle calculations of these systems indicate a pressure-induced van der Waals-to-covalent interlayer transition, where such interlayer covalent binding, in the presence of water molecules, results in a disordered insulating structure for the MLG + BN case, while it leads to an ordered conducting structure for both BLG + BN and TLG + BN heterostructures. These opposing effects may have a strong influence on graphene/h-BN-based electronic devices and their physics under pressurized environments.-
Formato: dc.formatapplication/pdf-
Idioma: dc.languageen-
Direitos: dc.rightsrestrito-
Título: dc.titleGraphene/h-BN heterostructures under pressure : from van der Waals to covale.-
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