Spin splitting tunable optical band gap in polycrystalline GdN thin films for spin filtering.

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Autor(es): dc.creatorVilela, Gilvania Lucia da Silva-
Autor(es): dc.creatorStephen, Gregory M.-
Autor(es): dc.creatorGratens, Xavier-
Autor(es): dc.creatorGalgano, Giovanni Decot-
Autor(es): dc.creatorHou, Yasen-
Autor(es): dc.creatorTakamura, Yota-
Autor(es): dc.creatorHeiman, D.-
Autor(es): dc.creatorHenriques, Andre Bohomoletz-
Autor(es): dc.creatorBerera, Geetha-
Autor(es): dc.creatorMoodera , Jagadeesh Subbaiah-
Data de aceite: dc.date.accessioned2025-08-21T15:18:32Z-
Data de disponibilização: dc.date.available2025-08-21T15:18:32Z-
Data de envio: dc.date.issued2025-01-07-
Data de envio: dc.date.issued2025-01-07-
Data de envio: dc.date.issued2023-
Fonte completa do material: dc.identifierhttps://www.repositorio.ufop.br/handle/123456789/19403-
Fonte completa do material: dc.identifierhttps://ciqm.harvard.edu/uploads/2/3/3/4/23349210/vilela.pdf-
Fonte completa do material: dc.identifierhttps://doi.org/10.1103/PhysRevB.109.L060401-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/capes/1009917-
Descrição: dc.descriptionRare-earth nitrides, such as gadolinium nitride (GdN), have great potential for spintronic devices due to their unique magnetic and electronic properties. GdN has a large magnetic moment, low coercitivity, and strong spin polarization suitable for spin transistors, magnetic memories, and spin-based quantum computing devices. Its large spin splitting of the optical band-gap functions as a spin filter that offers the means for spin-polarized current injection into metals, superconductors, topological insulators, two-dimensional layers, and other novel materials. As spintronics devices require thin films, a successful implementation of GdN demands a detailed investigation of the optical and magnetic properties in very thin films. With this objective, we investigate the dependence of the direct and indirect optical band gaps (Eg) of half-metallic GdN, using the trilayer structure AlN (10 nm)/GdN (t)/AlN (10 nm) for GdN film thickness t ranging from 6 to 350 nm, in both paramagnetic (PM) and ferromagnetic (FM) phases. Our results show a band gap of 1.6 eV in the PM state, while in the FM state the band gap splits for the majority (0.8 eV) and minority (1.2 eV) spin states. As the GdN film becomes thinner, the spin-split magnitude increases by 60%, going from 0.290 to 0.460 eV. Our results point to methods for engineering GdN films for spintronic devices.-
Formato: dc.formatapplication/pdf-
Idioma: dc.languageen-
Direitos: dc.rightsrestrito-
Título: dc.titleSpin splitting tunable optical band gap in polycrystalline GdN thin films for spin filtering.-
Aparece nas coleções:Repositório Institucional - UFOP

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