Characterization of AlGaN/GaN HEMTs with Different Manufacturing Characteristics

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.contributorGhent University-
Autor(es): dc.contributorImec-
Autor(es): dc.creatorPanzo, E. C.-
Autor(es): dc.creatorCandido, J.-
Autor(es): dc.creatorJunior, N. Graziano-
Autor(es): dc.creatorSimoen, E.-
Autor(es): dc.creatorAndrade, M. G.C.-
Data de aceite: dc.date.accessioned2025-08-21T19:42:47Z-
Data de disponibilização: dc.date.available2025-08-21T19:42:47Z-
Data de envio: dc.date.issued2025-04-29-
Data de envio: dc.date.issued2023-12-31-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/SBMicro64348.2024.10673850-
Fonte completa do material: dc.identifierhttps://hdl.handle.net/11449/309650-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/309650-
Descrição: dc.descriptionThis work presents the characterization of high mobility transistors (AlGaN/GaN HEMTs) produced with different techniques in the manufacturing process. The study performs a comparative analysis of the respective HEMTs. Here it is demonstrated that efficient HEMTs can be developed using 2 active implants without the need for specific heat treatment processes to create ohmic contacts or activate the device. The devices thus produced had higher drain current (Id), output conductance (gd), transconductance (gm), field effect mobility (μeff), effective mobility (μFE) and low field mobility (μ0), in addition to lowest series resistance (RSD), threshold voltage (VT) and subthreshold slope (S). These results indicate that the adopted methodology not only simplifies the manufacturing process but also significantly improves the performance of HEMTs. Keywords - HEMT, Manufacturing process, Gate metal, Series resistance, Ohmic contacts, GaN channel.-
Descrição: dc.descriptionSão Paulo State University Institute of Science and Technology, SP-
Descrição: dc.descriptionGhent University-
Descrição: dc.descriptionImec-
Descrição: dc.descriptionSão Paulo State University Institute of Science and Technology, SP-
Idioma: dc.languageen-
Relação: dc.relationSBMicro 2024 - 38th Symposium on Microelectronics Technology and Devices, Proceedings-
???dc.source???: dc.sourceScopus-
Título: dc.titleCharacterization of AlGaN/GaN HEMTs with Different Manufacturing Characteristics-
Tipo de arquivo: dc.typeaula digital-
Aparece nas coleções:Repositório Institucional - Unesp

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