Mobility Extraction Methods in AlGaN/GaN HEMTs

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.contributorGhent University-
Autor(es): dc.contributorImec-
Autor(es): dc.creatorPanzo, Eduardo Canga-
Autor(es): dc.creatorJunior, Nilton Graciano-
Autor(es): dc.creatorSimoen, Eddy-
Autor(es): dc.creatorDe Andrade, Maria Gloria Cano-
Data de aceite: dc.date.accessioned2025-08-21T16:37:51Z-
Data de disponibilização: dc.date.available2025-08-21T16:37:51Z-
Data de envio: dc.date.issued2025-04-29-
Data de envio: dc.date.issued2022-12-31-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/SBMicro60499.2023.10302530-
Fonte completa do material: dc.identifierhttps://hdl.handle.net/11449/308340-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/308340-
Descrição: dc.descriptionThis work deals with the comparison of the results of different methods for the extraction of charge mobility on AlGaN/GaN HEMT devices. They are, field effect mobility (μFE), effective mobility (μeff) and low field mobility (μ0), varying the gate length (Lg) and channel width (W), temperature (T) and gate voltage (Vg). In addition, the available data allowed the examination of figures of merit for the drain current (Id), output conductance (gd) and transconductance (gm), as well as the analysis of the behavior of the series resistance (RSD), threshold voltage (VT), and subthreshold slope (S). In this study, it was found that HEMTs have higher mobility for higher W, W/Lg and Vg, and for lower T in a range between 298K to 373K.-
Descrição: dc.descriptionSão Paulo State University (UNESP) Institute of Science and Technology, SP-
Descrição: dc.descriptionGhent University-
Descrição: dc.descriptionImec-
Descrição: dc.descriptionSão Paulo State University (UNESP) Institute of Science and Technology, SP-
Idioma: dc.languageen-
Relação: dc.relation2023 37th Symposium on Microelectronics Technology and Devices, SBMicro 2023-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectAlGaN/GaN-
Palavras-chave: dc.subjectHEMTs-
Palavras-chave: dc.subjectMobility-
Palavras-chave: dc.subjecttransconductance-
Título: dc.titleMobility Extraction Methods in AlGaN/GaN HEMTs-
Tipo de arquivo: dc.typeaula digital-
Aparece nas coleções:Repositório Institucional - Unesp

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