Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade de São Paulo (USP)-
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorCanales, Bruno G.-
Autor(es): dc.creatorMartino, Joao A.-
Autor(es): dc.creatorAgopian, Paula G. D.-
Data de aceite: dc.date.accessioned2025-08-21T21:56:42Z-
Data de disponibilização: dc.date.available2025-08-21T21:56:42Z-
Data de envio: dc.date.issued2025-04-29-
Data de envio: dc.date.issued2022-12-31-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/SBMicro60499.2023.10302593-
Fonte completa do material: dc.identifierhttps://hdl.handle.net/11449/307538-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/307538-
Descrição: dc.descriptionThe drain current in the Metal-Insulator-Semiconductor High Electron Mobility Transistor (MISHEMT) is studied as a function of AlGaN barrier layer thickness, Al molar fraction, and also the gate insulator thickness, focusing on the different MISHEMT conduction mechanisms. The device has a Si3N4/AlGAN/AlN/GaN heterostructure with 2 channels in the barrier layer - AlGaN (one field effect channel and one 2DEG) and 1 channel in the buffer layer - GaN (2DEG). It is observed that only the 2DEG channels activation voltages are affected by the barrier layer thickness and Al molar fraction, while the field effect conduction does not move away from the gate electrode. However all the channels are affected by altering the gate insulator thickness due to the transconductance changes.-
Descrição: dc.descriptionUniversity of Sao Paulo LSI/PSI/USP-
Descrição: dc.descriptionSao Paulo State University Unesp-
Descrição: dc.descriptionSao Paulo State University Unesp-
Idioma: dc.languageen-
Relação: dc.relation2023 37th Symposium on Microelectronics Technology and Devices, SBMicro 2023-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectaluminum molar fraction-
Palavras-chave: dc.subjectbarrier layer thickness-
Palavras-chave: dc.subjectgate insulator thickness-
Palavras-chave: dc.subjectIII-Nitride materials-
Palavras-chave: dc.subjectMISHEMT-
Título: dc.titleInfluence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms-
Tipo de arquivo: dc.typeaula digital-
Aparece nas coleções:Repositório Institucional - Unesp

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