Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade de São Paulo (USP)-
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorDe Araujo, Gustavo V.-
Autor(es): dc.creatorMartino, Joao A.-
Autor(es): dc.creatorAgopian, Paula G. D.-
Data de aceite: dc.date.accessioned2025-08-21T20:51:30Z-
Data de disponibilização: dc.date.available2025-08-21T20:51:30Z-
Data de envio: dc.date.issued2025-04-29-
Data de envio: dc.date.issued2022-12-31-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/SBMicro60499.2023.10302603-
Fonte completa do material: dc.identifierhttps://hdl.handle.net/11449/307446-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/307446-
Descrição: dc.descriptionIn this paper the Omega-gate nanowire (NW) transistor applied for designing Operational Transconductance Amplifier (OTA) is studied, focusing mainly on the trade-off between voltage gain (Av) and gain-bandwidth product (GBW). One option to determine a good compromise between gain and frequency response is to get a bias condition where the product Av ∗ GBW reach the maximum values. For NW nMOSFET and pMOSFET the maximum product occurs for gm/ID = 11 V-1 and 10 V-1 respectively. OTA simulations were realized based on experimental data using Verilog A language with look up table method. The circuit was created using Cadence's Spectre showing great results for the omega-gate nanowire as a voltage gain of 1122 V/V and a GBW of 602 MHz for a gm/ID of 8 V-1. Our work shows that the best results for OTA circuit was obtained when the transistor efficiency is gm/ID = 8 V-1, different of the values got from individual transistors.-
Descrição: dc.descriptionUniversity of Sao Paulo LSI/PSI/USP-
Descrição: dc.descriptionSao Paulo State University Unesp-
Descrição: dc.descriptionSao Paulo State University Unesp-
Idioma: dc.languageen-
Relação: dc.relation2023 37th Symposium on Microelectronics Technology and Devices, SBMicro 2023-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectAnalog Circuit Design-
Palavras-chave: dc.subjectNanowire-
Palavras-chave: dc.subjectOmega-gate-
Palavras-chave: dc.subjectOperational Transconductance Amplifier (OTA)-
Título: dc.titleAnalysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs-
Tipo de arquivo: dc.typeaula digital-
Aparece nas coleções:Repositório Institucional - Unesp

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