Influence of the Temperature on the Operational Transconductance Amplifier designed with triple gate SOI FinFETs

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade de São Paulo (USP)-
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorHilkner, Henrique-
Autor(es): dc.creatorDer Agopian, Paula Ghedini-
Autor(es): dc.creatorMartino, Joao Antonio-
Data de aceite: dc.date.accessioned2025-08-21T19:03:45Z-
Data de disponibilização: dc.date.available2025-08-21T19:03:45Z-
Data de envio: dc.date.issued2025-04-29-
Data de envio: dc.date.issued2023-12-31-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/SBMicro64348.2024.10673838-
Fonte completa do material: dc.identifierhttps://hdl.handle.net/11449/307319-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/307319-
Descrição: dc.descriptionThis paper presents the temperature influence on the Operational Transconductance Amplifier (OTA) designed with triple gate Silicon-On-Insulator (SOI) FinFETs. The FinFET electrical characteristics were obtained experimentally at room temperature, and the results were used to model it using Lookup table in Verilog-A. Based on the transistors experimental data, the OTA was simulated at room temperature and also for low and high temperature (from 180 to 600 K) using simulation device characteristics, with and without thermal compensation (TC). The increases in temperature resulted in the decreases of the voltage gain, gain-bandwidth (GBW) due to the mobility degradation, and in the increases in phase margin. For both circuits, from 180 to 600 K, the values of the parameters variations and the resulting curves were very similar: the results demonstrated an average reduction per 100 K of 6.8% in voltage gain at low frequencies, 17.1% in GBW, 14.5% in the transistor efficiency gm/ID, and a slight average increase of 1.9% in phase margins. The little differences between the OTA circuits with and without TC bias circuit do not require a complex thermal compensated bias circuit.-
Descrição: dc.descriptionUniversity of Sao Paulo LSI/PSI/USP-
Descrição: dc.descriptionUnesp Sao Paulo State University-
Descrição: dc.descriptionUnesp Sao Paulo State University-
Idioma: dc.languageen-
Relação: dc.relationSBMicro 2024 - 38th Symposium on Microelectronics Technology and Devices, Proceedings-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectAnalog amplifier-
Palavras-chave: dc.subjectOTA circuit-
Palavras-chave: dc.subjectSOI FinFET-
Palavras-chave: dc.subjectTemperature-
Palavras-chave: dc.subjectThermal analysis-
Palavras-chave: dc.subjectTransistor-
Título: dc.titleInfluence of the Temperature on the Operational Transconductance Amplifier designed with triple gate SOI FinFETs-
Tipo de arquivo: dc.typeaula digital-
Aparece nas coleções:Repositório Institucional - Unesp

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