Experimental study of MISHEMT from 450 K down to 200 K for analog applications

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade de São Paulo (USP)-
Autor(es): dc.contributorImec-
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorPerina, Welder F.-
Autor(es): dc.creatorMartino, Joao A.-
Autor(es): dc.creatorSimoen, Eddy-
Autor(es): dc.creatorPeralagu, Uthayasankaran-
Autor(es): dc.creatorCollaert, Nadine-
Autor(es): dc.creatorAgopian, Paula G.D.-
Data de aceite: dc.date.accessioned2025-08-21T22:49:35Z-
Data de disponibilização: dc.date.available2025-08-21T22:49:35Z-
Data de envio: dc.date.issued2025-04-29-
Data de envio: dc.date.issued2023-10-01-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1016/j.sse.2023.108742-
Fonte completa do material: dc.identifierhttps://hdl.handle.net/11449/305464-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/305464-
Descrição: dc.descriptionThis work presents an experimental analysis of Metal-Insulator-Semiconductor High Electron Mobility transistor (MISHEMT) operating in a temperature range from 450 K down to 200 K, focusing on analog applications. The drain current and consequently the saturation transconductance (gmsat) showed to be slightly dependent on gate length. The output conductance (gD) presents a higher dependence with gate length than gmsat for the whole temperature range due to the influence of MOS conduction that is strongly affected by short channel effect. There is also a kink in the behavior of these parameters at 350 K, most likely due to the competition of temperature effects on different conduction mechanisms. The transistors showed a good performance in terms of analog application, where the intrinsic voltage gain (AV) increases from 38 dB (at 200 K) to 43 dB (at 450 K) for 800 nm gate length while the unity gain frequency (fT) decreases from 1.8 GHz (at 200 K) to 800 MHz (at 450 K) for a gate length of 400 nm, which makes MISHEMT a good candidate for analog applications.-
Descrição: dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)-
Descrição: dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
Descrição: dc.descriptionLSI/PSI/USP University of Sao Paulo-
Descrição: dc.descriptionImec, Kapeldreef 75-
Descrição: dc.descriptionUNESP Sao Paulo State University-
Descrição: dc.descriptionUNESP Sao Paulo State University-
Idioma: dc.languageen-
Relação: dc.relationSolid-State Electronics-
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Palavras-chave: dc.subjectAnalog operation-
Palavras-chave: dc.subjectGaN-
Palavras-chave: dc.subjectHigh-temperature-
Palavras-chave: dc.subjectLow-temperature-
Palavras-chave: dc.subjectMISHEMTs-
Título: dc.titleExperimental study of MISHEMT from 450 K down to 200 K for analog applications-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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