Benchmarking diamond surface preparation and fluorination via inductively coupled plasma-reactive ion etching

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Autor(es): dc.contributorRice University-
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.contributorRF Devices and Circuits-
Autor(es): dc.contributorU.S. Naval Research Laboratory-
Autor(es): dc.creatorGray, Tia-
Autor(es): dc.creatorZhang, Xiang-
Autor(es): dc.creatorBiswas, Abhijit-
Autor(es): dc.creatorTerlier, Tanguy-
Autor(es): dc.creatorOliveira, Eliezer F.-
Autor(es): dc.creatorPuthirath, Anand B.-
Autor(es): dc.creatorLi, Chenxi-
Autor(es): dc.creatorPieshkov, Tymofii S.-
Autor(es): dc.creatorGarratt, Elias J.-
Autor(es): dc.creatorNeupane, Mahesh R.-
Autor(es): dc.creatorPate, Bradford B.-
Autor(es): dc.creatorBirdwell, A. Glen-
Autor(es): dc.creatorIvanov, Tony G.-
Autor(es): dc.creatorVajtai, Robert-
Autor(es): dc.creatorAjayan, Pulickel M.-
Data de aceite: dc.date.accessioned2025-08-21T23:27:41Z-
Data de disponibilização: dc.date.available2025-08-21T23:27:41Z-
Data de envio: dc.date.issued2025-04-29-
Data de envio: dc.date.issued2024-09-01-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1016/j.carbon.2024.119366-
Fonte completa do material: dc.identifierhttps://hdl.handle.net/11449/303257-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/303257-
Descrição: dc.descriptionDiamond, renowned for its exceptional semiconducting properties, stands out as a promising material for high-performance power electronics, optics, quantum, and biosensing technologies. This study methodically investigates the optimization of polycrystalline diamond (PCD) substrate surfaces through Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE). Various parameters, including gaseous species, flow rate, coil power, and bias power were tuned to understand their impact on surface morphology and chemistry. A thorough characterization, encompassing chemical, spectroscopic, and microscopic methods, shed light on the effects of different ICP-RIE conditions on surface properties. CF4/O2 plasma emerged as a viable treatment for achieving smooth PCD surfaces with minimal etch pit formation. Most notably, surface fluorination, a critical aspect of increasing chemical and thermal stability, was successfully accomplished using CF4, SF6, and other F-containing plasmas. The fluorine concentration and surface chemistry variations were studied, with high resolution X-ray Photoelectron Spectroscopy unveiling differences amongst the sp2 C phase, sp3 C phase, C–O, C[dbnd]O, and C–F bonds. Time-of-flight secondary Ion Mass Spectrometry (ToF-SIMS) and depth-profile analysis unveiled a consistent surface fluorination pattern with CF4/O2 treatment. Furthermore, contact angle measurements showcased heightened hydrophobicity. This study provides valuable insights into precise diamond surface engineering, important for the development of future diamond-based semiconductor technologies.-
Descrição: dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
Descrição: dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
Descrição: dc.descriptionNational Science Foundation-
Descrição: dc.descriptionArmy Research Office-
Descrição: dc.descriptionDepartment of Materials Science and Nanoengineering Rice University-
Descrição: dc.descriptionSIMS Laboratory Shared Equipment Authority Rice University-
Descrição: dc.descriptionDepartment of Physics and Meteorology School of Sciences São Paulo State University (Unesp), SP-
Descrição: dc.descriptionApplied Physics Graduate Program Smalley-Curl Institute Rice University-
Descrição: dc.descriptionDEVCOM Army Research Laboratory RF Devices and Circuits-
Descrição: dc.descriptionChemistry Division U.S. Naval Research Laboratory-
Descrição: dc.descriptionDepartment of Physics and Meteorology School of Sciences São Paulo State University (Unesp), SP-
Descrição: dc.descriptionFAPESP: 2023/08122–0-
Descrição: dc.descriptionNational Science Foundation: 2236422-
Descrição: dc.descriptionCNPq: 304957/2023–2-
Descrição: dc.descriptionNational Science Foundation: CBET-1626418-
Descrição: dc.descriptionArmy Research Office: W911NF-19-2-0269-
Idioma: dc.languageen-
Relação: dc.relationCarbon-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectContact angle-
Palavras-chave: dc.subjectDiamond-
Palavras-chave: dc.subjectFluorination-
Palavras-chave: dc.subjectReactive ion etching-
Palavras-chave: dc.subjectSurface morphology-
Título: dc.titleBenchmarking diamond surface preparation and fluorination via inductively coupled plasma-reactive ion etching-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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