Pushing On-Chip Photosensitivity Forward Using Edge-Driven Vertical Organic Phototransistors

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.contributorBrazilian Center for Research in Energy and Materials-
Autor(es): dc.contributorChemnitz University of Technology-
Autor(es): dc.contributorBruno Kessler Foundation (FBK)-
Autor(es): dc.contributorMackenzie Presbyterian Institute-
Autor(es): dc.creatorMaria de Andrade, Denise-
Autor(es): dc.creatorMerces, Leandro-
Autor(es): dc.creatorNawaz, Ali-
Autor(es): dc.creatorBof Bufon, Carlos Cesar-
Data de aceite: dc.date.accessioned2025-08-21T15:23:24Z-
Data de disponibilização: dc.date.available2025-08-21T15:23:24Z-
Data de envio: dc.date.issued2025-04-29-
Data de envio: dc.date.issued2023-06-27-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1021/acsaelm.3c00121-
Fonte completa do material: dc.identifierhttps://hdl.handle.net/11449/301220-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/301220-
Descrição: dc.descriptionDeveloping high-performance photosensors using prototype device architectures is essential to pushing forward developing and advancing next-generation optoelectronic applications. This work reports an organic phototransistor (OPT) with an ultra-short conducting channel (tens of nanometers) and outstanding photoelectric conversion efficiency. The OPT is based on a vertical organic field-effect transistor (VOFET) architecture, which utilizes a rolled-up metallic nanomembrane (NM) as the drain electrode and a photolithographically patterned (rectangular-shaped) perforated source electrode. These features expand the concept of conventional VOFETs as the former enables the incorporation of ultra-thin active layers and allows reliable control over gate-induced modulation of channel current. Using the engineering as abovementioned strategies, we focused on obtaining an improved device performance, studying their fundamental operating principle, and further investigating their application as photosensors. The optimized devices exhibited low operating voltages (<5 V) and enhanced on/off current ratio (∼105). The VOFET photoresponse was characterized by measuring the electrical characteristics in the dark and under illumination using three different monochromatic light colors. Under blue light, our devices demonstrated impressive photosensitivity (Pmax ≈ 105) and fast photoelectric conversion (steep light-induced threshold voltage shift), demonstrating that the rolled-up NM OPT shows excellent potential as a highly sensitive photodetector with low power consumption.-
Descrição: dc.descriptionAdvanced Foods and Materials Canada-
Descrição: dc.descriptionAssociation Française contre les Myopathies-
Descrição: dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)-
Descrição: dc.descriptionCalgary Laboratory Services-
Descrição: dc.descriptionCanadian Light Source-
Descrição: dc.descriptionDr.Ir. Cornelis Lely Stichting-
Descrição: dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
Descrição: dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
Descrição: dc.descriptionPostgraduate Program in Materials Science and Technology (POSMAT) São Paulo State University (UNESP), Sao Paul-
Descrição: dc.descriptionBrazilian Nanotechnology National Laboratory Brazilian Center for Research in Energy and Materials, Sao Paul-
Descrição: dc.descriptionResearch Center for Materials Architectures and Integration of Nanomembranes (MAIN) Chemnitz University of Technology-
Descrição: dc.descriptionCenter for Sensors and Devices Bruno Kessler Foundation (FBK)-
Descrição: dc.descriptionMackenzie Presbyterian Institute, São Paulo-SP-
Descrição: dc.descriptionPostgraduate Program in Materials Science and Technology (POSMAT) São Paulo State University (UNESP), Sao Paul-
Formato: dc.format3038-3047-
Idioma: dc.languageen-
Relação: dc.relationACS Applied Electronic Materials-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectDNTT-
Palavras-chave: dc.subjectorganic phototransistor-
Palavras-chave: dc.subjectpatterned source-
Palavras-chave: dc.subjectphotosensor-
Palavras-chave: dc.subjectrolled-up nanomembrane-
Palavras-chave: dc.subjectVOFET-
Título: dc.titlePushing On-Chip Photosensitivity Forward Using Edge-Driven Vertical Organic Phototransistors-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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