Unveiling the polar properties on barium bismuthate perovskite thin films with distinct Ba/Bi ratios

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.contributorCONICET-National University of Mar del Plata-
Autor(es): dc.contributorUNIFEI-
Autor(es): dc.creatorAcero, G.-
Autor(es): dc.creatorMoreno, H.-
Autor(es): dc.creatorOrtega, P. P.-
Autor(es): dc.creatorRamirez, M. A.-
Autor(es): dc.creatorPonce, M. A.-
Autor(es): dc.creatorMoura, F.-
Autor(es): dc.creatorSimões, A. Z.-
Data de aceite: dc.date.accessioned2025-08-21T16:20:50Z-
Data de disponibilização: dc.date.available2025-08-21T16:20:50Z-
Data de envio: dc.date.issued2025-04-29-
Data de envio: dc.date.issued2024-02-14-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1016/j.jallcom.2023.172871-
Fonte completa do material: dc.identifierhttps://hdl.handle.net/11449/299671-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/299671-
Descrição: dc.descriptionThis research aims to investigate the domain structure of BaBiO3 (80:20), BaBiO3 (50:50), and BaBiO3 (30:70) thin films obtained by the polymeric precursor method. For better sample designations, the following codes were employed: (80:20) (BBO82), (50:50) (BBO55), and (30:70) (BBO37). The piezo-ferroelectric coupled behavior observed for barium bismuthates thin films was elucidated in terms of bismuth and oxygen vacancies as well as grain morphology, which can be controlled by stoichiometric changes (Ba/Bi ratios). The films crystallize in a rhombohedral BaBiO3 structure with an R-3R space group without any deleterious secondary phase. Additionally, the hysteretic strain, dielectric, ferroelectric, and piezoelectric properties of BaBiO3 thin films are strongly dependent on the film texture. Sample BBO55 showed a distinguished preferred orientation along the (341) plane with a low associated coercive field (66.87 kV/cm), free of imprint and with no polarizations gap compared to samples BBO37 and BBO82. Sample BBO55 presented the highest piezoelectric (d33-eff ≈ 45.7 pm/V) and ferroelectric (Pr≈19.87 μC/cm2) responses. This behavior can be ascribed to a highly textured film, which generates less strain throughout the crystal lattice, facilitating the polarization switching mechanism and improving piezo/ferroelectricity. These findings are significant for developing novel, high-performance, lead-free piezoelectric materials to be applied in different electronic components such as magnetic field sensors, switches, actuators, and other types of memory devices.-
Descrição: dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
Descrição: dc.descriptionSchool of Engineering and Sciences Guaratinguetá São Paulo State University UNESP, SP-
Descrição: dc.descriptionInstitute for Materials Science and Technology Research (INTEMA) CONICET-National University of Mar del Plata, Juan B. Justo 4302-
Descrição: dc.descriptionAdvanced Materials Interdisciplinary Laboratory Federal University of Itajuba UNIFEI Campus Itabira, MG-
Descrição: dc.descriptionSchool of Engineering and Sciences Guaratinguetá São Paulo State University UNESP, SP-
Descrição: dc.descriptionFAPESP: 13/07296–2-
Idioma: dc.languageen-
Relação: dc.relationJournal of Alloys and Compounds-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectBaBiO3-
Palavras-chave: dc.subjectFerroelectric-
Palavras-chave: dc.subjectPiezoelectric-
Palavras-chave: dc.subjectPolymeric Precursor Method-
Palavras-chave: dc.subjectThin film-
Título: dc.titleUnveiling the polar properties on barium bismuthate perovskite thin films with distinct Ba/Bi ratios-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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