Electrolyte-Gated Vertical Transistor Charge Transport Enables Photo-Switching

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Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.contributorChemnitz University of Technology-
Autor(es): dc.contributorMackenzie Presbyterian University-
Autor(es): dc.creatorVieira, Douglas Henrique-
Autor(es): dc.creatorNogueira, Gabriel Leonardo-
Autor(es): dc.creatorMerces, Leandro-
Autor(es): dc.creatorBufon, Carlos César Bof-
Autor(es): dc.creatorAlves, Neri-
Data de aceite: dc.date.accessioned2025-08-21T19:12:33Z-
Data de disponibilização: dc.date.available2025-08-21T19:12:33Z-
Data de envio: dc.date.issued2025-04-29-
Data de envio: dc.date.issued2024-06-01-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1002/aelm.202300562-
Fonte completa do material: dc.identifierhttps://hdl.handle.net/11449/298675-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/298675-
Descrição: dc.descriptionProposals for new architectures that shorten the length of the transistor channel without the need for high-end techniques are the focus of very recent breakthrough research. Although vertical and electrolyte-gate transistors are previously developed separately, recent advances have introduced electrolytes into vertical transistors, resulting in electrolyte-gated vertical field-effect transistors (EGVFETs), which feature lower power consumption and higher capacitance. Here, EGVFETs are employed to study the charge transport mechanism of spray-pyrolyzed zinc oxide (ZnO) films to develop a new photosensitive switch concept. The EGVFET's diode cell revealed a current-voltage relationship arising from space-charge-limited current (SCLC), whereas its capacitor cell provided the field-effect role in charge accumulation in the device's source perforations. The findings elucidate how the field effect causes a continuous shift in SCLC regimes, impacting the switching dynamics of the transistor. It is found ultraviolet light may mimic the field effect, i.e., a pioneering demonstration of current switching as a function of irradiance in an EGVFET. The research provides valuable insights into the charge transport characterization of spray-pyrolyzed ZnO-based transistors, paving the way for future nano- and optoelectronic applications.-
Descrição: dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
Descrição: dc.descriptionFaculty of Science and Technology (FCT) Physics Department São Paulo State University—UNESP, São Paulo-
Descrição: dc.descriptionResearch Center for Materials Architectures and Integration of Nanomembranes (MAIN) Chemnitz University of Technology-
Descrição: dc.descriptionMackenzie Presbyterian University, São Paulo-
Descrição: dc.descriptionFaculty of Science and Technology (FCT) Physics Department São Paulo State University—UNESP, São Paulo-
Descrição: dc.descriptionFAPESP: 2017/02317-2-
Descrição: dc.descriptionFAPESP: 2018/18136-0-
Descrição: dc.descriptionFAPESP: 2020/12282-4-
Descrição: dc.descriptionFAPESP: 2022/12332-7-
Idioma: dc.languageen-
Relação: dc.relationAdvanced Electronic Materials-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectcharge transport mechanism-
Palavras-chave: dc.subjectelectrolyte-gated transistor-
Palavras-chave: dc.subjectSchottky diode-
Palavras-chave: dc.subjectspray pyrolysis-
Palavras-chave: dc.subjectvertical phototransistor-
Título: dc.titleElectrolyte-Gated Vertical Transistor Charge Transport Enables Photo-Switching-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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