Unveiling the metal-insulator transition at YTiO3/LaTiO3 interfaces grown by the soft chemical method

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Autor(es): dc.contributorFederal University of Itajubá-
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.contributorUniversidade Federal de São Carlos (UFSCar)-
Autor(es): dc.contributorCONICET-Universidad Nacional de Mar del Plata-
Autor(es): dc.creatorTolentino Cabral, Ana Cristina-
Autor(es): dc.creatorTafur Tanta, Urbano Miguel-
Autor(es): dc.creatorSimões, Alexandre Zirpoli-
Autor(es): dc.creatorBastos, Wagner-
Autor(es): dc.creatorMoreno, Henrique-
Autor(es): dc.creatorRamirez, Miguel Angel-
Autor(es): dc.creatorPonce, Miguel Adolfo-
Autor(es): dc.creatorMoura, Francisco-
Data de aceite: dc.date.accessioned2025-08-21T15:36:21Z-
Data de disponibilização: dc.date.available2025-08-21T15:36:21Z-
Data de envio: dc.date.issued2023-07-29-
Data de envio: dc.date.issued2023-07-29-
Data de envio: dc.date.issued2023-07-01-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1016/j.matchemphys.2023.127709-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/249860-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/249860-
Descrição: dc.descriptionIn the last couple of years, perovskites and transition metal oxides have demonstrated high potential for energy storage/processing applications. Oxide interfaces with piezoelectric, magnetic and metal-insulator transition based on YTiO3/LaTiO3 heterostructured films were investigated in this work. The Mott insulator, YTiO3, was deposited onto a Mott insulator, LaTiO3, via polymeric precursor method. Spin coating was performed to obtain a YTiO3/LaTiO3 heterostructed thin films deposited onto Pt/TiO2/SiO2/Si substrates. Structure, morphology, and electrical properties of the films were assessed. The YTiO3/LaTiO3 heterostructures exhibit ferromagnetic and piezoelectric behavior (d33máx≈8.11 p.m./V), which may be attributed to smaller grain (average grain size≈20.00 nm) and, thus, a higher grain boundary density, and stress in the film plane due to the different properties of the interface. The dielectric permittivity and dielectric loss at 1 KHz were found to be 70 and 0.41, respectively. I–V measurements on different electrode areas confirmed a metal-to-insulator transition, indicating a potential aplication in correlated electron random access memory (CeRAM).-
Descrição: dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)-
Descrição: dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
Descrição: dc.descriptionFundação de Amparo à Pesquisa do Estado de Minas Gerais (FAPEMIG)-
Descrição: dc.descriptionFinanciadora de Estudos e Projetos-
Descrição: dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
Descrição: dc.descriptionInterdisciplinary Laboratory of Advanced Materials (LIMAv) Federal University of Itajubá, Campus Itabira, 200, Industrial District II-
Descrição: dc.descriptionSchool of Engineering and Sciences Guaratinguetá São Paulo State University – UNESP, Guaratinguetá, SP-
Descrição: dc.descriptionCDMF LIEC Chemistry Department of the Federal University of São Carlos - (UFSCar), P.O. Box 676, São Carlos, SP-
Descrição: dc.descriptionInstituto de Investigaciones en Ciencia y Tecnología de Materiales (INTEMA) CONICET-Universidad Nacional de Mar del Plata, Juan B. Justo 4302-
Descrição: dc.descriptionSchool of Engineering and Sciences Guaratinguetá São Paulo State University – UNESP, Guaratinguetá, SP-
Descrição: dc.descriptionFAPESP: 2018/18236-4-
Idioma: dc.languageen-
Relação: dc.relationMaterials Chemistry and Physics-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectMagnetic properties-
Palavras-chave: dc.subjectMetal-insulator transition-
Palavras-chave: dc.subjectPerovskite-
Palavras-chave: dc.subjectPiezoelectric properties-
Palavras-chave: dc.subjectPolymeric precursor method-
Título: dc.titleUnveiling the metal-insulator transition at YTiO3/LaTiO3 interfaces grown by the soft chemical method-
Tipo de arquivo: dc.typelivro digital-
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