Disclosing the nature of vacancy defects in α-Ag2WO4

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Federal de São Carlos (UFSCar)-
Autor(es): dc.contributorUniversity Jaume I (UJI)-
Autor(es): dc.contributorUniversity of Mar del Plata and National Research Council (CONICET)-
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.contributorInstitute of Materials Physics of Tandil - IFIMAT (UNCPBA) and CIFICEN (UNCPBA-CICPBA-CONICET)-
Autor(es): dc.contributorFederal University of Itajubá-
Autor(es): dc.creatorAssis, M.-
Autor(es): dc.creatorCastro, M. S.-
Autor(es): dc.creatorAldao, C. M.-
Autor(es): dc.creatorBuono, C.-
Autor(es): dc.creatorOrtega, P. P.-
Autor(es): dc.creatorTeodoro, M. D.-
Autor(es): dc.creatorAndrés, J.-
Autor(es): dc.creatorGouveia, A. F.-
Autor(es): dc.creatorSimões, A. Z.-
Autor(es): dc.creatorLongo, E.-
Autor(es): dc.creatorMacchi, C. E.-
Autor(es): dc.creatorSomoza, A.-
Autor(es): dc.creatorMoura, F.-
Autor(es): dc.creatorPonce, M. A.-
Data de aceite: dc.date.accessioned2025-08-21T20:31:26Z-
Data de disponibilização: dc.date.available2025-08-21T20:31:26Z-
Data de envio: dc.date.issued2023-07-29-
Data de envio: dc.date.issued2023-07-29-
Data de envio: dc.date.issued2023-08-01-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1016/j.materresbull.2023.112252-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/249833-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/249833-
Descrição: dc.descriptionDefects at semiconductors with electron acceptor and donor sites govern the electronic and optoelectronic applications due to their unique electronic properties. This work provides deep insight into the nature of defects and the conduction mechanism in α-Ag2WO4. To this aim, a detailed analysis of the results of XRD with Rietveld refinements, FE-SEM images, and measurements of different spectroscopies (impedance, positron annihilation lifetime, and photoluminescence) are carried out on α-Ag2WO4 samples synthesized by a simple co-precipitation method. Two types of vacancy defects: cationic O-vacancies, and anionic Ag or Ag–O vacancy complexes are elucidated with a Schottky p-type potential barrier. The results indicate that the Ag vacancies remain constant during thermal treatment, while an opposite effect is found for the oxygen vacancies. This behavior governs the multifunctional properties of α-Ag2WO4 semiconductors via a tunneling plus thermionic conduction mechanism.-
Descrição: dc.descriptionCDMF Federal University of São Carlos (UFSCar)-
Descrição: dc.descriptionDepartment of Physical and Analytical Chemistry University Jaume I (UJI), Castellón-
Descrição: dc.descriptionInstitute of Materials Science and Technology (INTEMA) University of Mar del Plata and National Research Council (CONICET), Av. Colón 10850-
Descrição: dc.descriptionInstitute of Scientific and Technological Research in Electronics (ICYTE) University of Mar del Plata and National Research Council (CONICET), Juan B. Justo 4302-
Descrição: dc.descriptionSchool of Engineering São Paulo State University (UNESP), Av. Dr. Ariberto Pereira da Cunha 333, Portal das Colinas-
Descrição: dc.descriptionDepartment of Physics Federal University of São Carlos (UFSCar)-
Descrição: dc.descriptionInstitute of Materials Physics of Tandil - IFIMAT (UNCPBA) and CIFICEN (UNCPBA-CICPBA-CONICET), Pinto 399-
Descrição: dc.descriptionAdvanced Materials Interdisciplinary Laboratory Federal University of Itajubá, Unifei – Campus Itabira, MG-
Descrição: dc.descriptionSchool of Engineering São Paulo State University (UNESP), Av. Dr. Ariberto Pereira da Cunha 333, Portal das Colinas-
Idioma: dc.languageen-
Relação: dc.relationMaterials Research Bulletin-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectDefects-
Palavras-chave: dc.subjectElectronic properties-
Palavras-chave: dc.subjectα-Ag2WO4-
Título: dc.titleDisclosing the nature of vacancy defects in α-Ag2WO4-
Tipo de arquivo: dc.typelivro digital-
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