Magnetoelectric coupling at room temperature in LaTiO3/SrTiO3 heterojunctions

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.contributorUniversity of Mar del Plata (UNMdP) and National Research Council (CONICET)-
Autor(es): dc.contributorNational Research Council (CONICET)-
Autor(es): dc.contributorFederal University of Itajuba-
Autor(es): dc.creatorSimoes, A. Z.-
Autor(es): dc.creatorOrtega, P. P.-
Autor(es): dc.creatorRamirez, M. A.-
Autor(es): dc.creatorMoreno, H.-
Autor(es): dc.creatorAldao, C. M.-
Autor(es): dc.creatorPonce, M. A.-
Autor(es): dc.creatorMoura, F.-
Data de aceite: dc.date.accessioned2025-08-21T21:42:35Z-
Data de disponibilização: dc.date.available2025-08-21T21:42:35Z-
Data de envio: dc.date.issued2023-07-29-
Data de envio: dc.date.issued2023-07-29-
Data de envio: dc.date.issued2023-06-01-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1016/j.materresbull.2023.112169-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/249609-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/249609-
Descrição: dc.descriptionThis work focuses on LaTiO3 (LTO) thin films synthesized by the polymeric precursor method and deposited onto SrTiO3 (STO) substrates via spin coating. The results show interesting coexisting ferromagnetic (Mr≈2.85 emu/g) - ferroelectric (Pr≈18.5 μC/cm2) responses at room temperature. Magnetoelectric coupling can be observed under DC bias magnetic field (14 V/cm.Oe), and its dielectric constant is affected by the coupling between magnetic and electric dipoles at room temperature as well as oxygen octahedra distortion along direction a. Little film-substrate mismatch significantly influences the system dielectric properties. Our results suggest the possibility to induce ferromagnetic/ferroelectric phases in the LTO/STO heterojunctions using an electric/magnetic field, respectively, due to the magnetoelectric coupling. This study also helps comprehend oxygen vacancy dynamics when applying a tensile strain or an external electric field, which is fundamental for actuators, switches, magnetic field sensors, and new types of electronic memory devices.-
Descrição: dc.descriptionSchool of Engineering and Sciences São Paulo State University (UNESP), Guaratinguetá, Av. Dr. Ariberto Pereira da Cunha 333, Portal das Colinas, SP-
Descrição: dc.descriptionInstitute of Scientific and Technological Research in Electronics (ICYTE) University of Mar del Plata (UNMdP) and National Research Council (CONICET), Juan B. Justo 4302-
Descrição: dc.descriptionInstitute of Materials Science and Technology Research (INTEMA) University of Mar del Plata (UNMdP) National Research Council (CONICET), Juan B. Justo 4302-
Descrição: dc.descriptionAdvanced Materials Interdisciplinary Laboratory Federal University of Itajuba, UNIFEI – Campus Itabira, MG-
Descrição: dc.descriptionSchool of Engineering and Sciences São Paulo State University (UNESP), Guaratinguetá, Av. Dr. Ariberto Pereira da Cunha 333, Portal das Colinas, SP-
Idioma: dc.languageen-
Relação: dc.relationMaterials Research Bulletin-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectChemical synthesis-
Palavras-chave: dc.subjectMott insulator-
Palavras-chave: dc.subjectMultiferroic-
Palavras-chave: dc.subjectThin films-
Título: dc.titleMagnetoelectric coupling at room temperature in LaTiO3/SrTiO3 heterojunctions-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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