Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.contributorBelgium Also Imec-
Autor(es): dc.creatorJunior, Braz Baptista-
Autor(es): dc.creatorDe Andrade, Maria Gloria Cano-
Autor(es): dc.creatorDe Oliveira Bergamim, Luis Felipe-
Autor(es): dc.creatorNogueira, Carlos Roberto-
Autor(es): dc.creatorAbud, Renan Baptista-
Autor(es): dc.creatorSimoen, Eddy-
Data de aceite: dc.date.accessioned2025-08-21T16:14:35Z-
Data de disponibilização: dc.date.available2025-08-21T16:14:35Z-
Data de envio: dc.date.issued2023-07-29-
Data de envio: dc.date.issued2023-07-29-
Data de envio: dc.date.issued2021-12-31-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/LAEDC54796.2022.9908239-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/249337-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/249337-
Descrição: dc.descriptionIn this paper, the temperature dependence of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrates is studied experimentally. Drain current (ID), transconductance (gm), threshold voltage (VT) and drain-induced barrier lowering (DIBL) were analyzed in the temperature range from -35°C to 200°C. In addition, gate current (IG) and subthreshold slope (SS) were also analyzed in order to understand the physical mechanisms involved. The results indicate that gate current increases with increasing temperature. Also, as the gate current (IG) increases, the drain current (ID) decreases. The characteristics of AlGaN/GaN HEMTs on silicon substrates indicate that they may be a promising candidate for analog and radio frequency (RF) applications.-
Descrição: dc.descriptionSão Paulo State University (UNESP) Institute of Science and Technology, SP-
Descrição: dc.descriptionGhent University Ghent Belgium Also Imec-
Descrição: dc.descriptionSão Paulo State University (UNESP) Institute of Science and Technology, SP-
Idioma: dc.languageen-
Relação: dc.relation2022 IEEE Latin America Electron Devices Conference, LAEDC 2022-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectAlGaN/GaN-
Palavras-chave: dc.subjectgate leakage-
Palavras-chave: dc.subjectHEMT-
Palavras-chave: dc.subjectHigh-temperature-
Título: dc.titleTemperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers-
Tipo de arquivo: dc.typeaula digital-
Aparece nas coleções:Repositório Institucional - Unesp

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