Zero Waste and Biodegradable Zinc Oxide Thin-Film Transistors for UV Sensors and Logic Circuits

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.contributorBangor-
Autor(es): dc.contributorJames Watt School of Engineering-
Autor(es): dc.creatorNogueira, Gabriel L.-
Autor(es): dc.creatorKumar, Dinesh-
Autor(es): dc.creatorZhang, Shoushou-
Autor(es): dc.creatorAlves, Neri-
Autor(es): dc.creatorKettle, Jeff-
Data de aceite: dc.date.accessioned2025-08-21T23:27:20Z-
Data de disponibilização: dc.date.available2025-08-21T23:27:20Z-
Data de envio: dc.date.issued2023-07-29-
Data de envio: dc.date.issued2023-07-29-
Data de envio: dc.date.issued2023-04-01-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/TED.2023.3249126-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/248505-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/248505-
Descrição: dc.descriptionBioderived and biodegradable electronics have the capability to reduce significantly waste electrical and electronics equipment (WEEE) and can also be applied to other sectors, where degradation to benign by-products is essential, such as marine, farming, or health monitoring. Herein, the authors report biodegradable thin-film transistors (TFTs) arrays based on zinc oxide (ZnO) active layer using molybdenum (Mo) source, drain, and gate electrodes. The developed TFTs were fabricated at room temperature onto a planarized biodegradable substrate surface and achieved an Ion/Ioff ratio of ∼ 4× 106 , a threshold voltage of ∼ 2.3 V, a field-effect mobility in the saturation region of 1.3 cm 2 V-1 s-1 , and a subthreshold swing of 0.3 V dec -1 and show stable device performance under stability tests. Based upon the successful fabrication of the ZnO TFT array, the demonstration of a UV sensor (phototransistors mode) and simple logic circuits (inverter and both NAND and NOR gate circuits) are presented. Furthermore, a method to 'control' the transience was implemented by using a printed heater that could accelerate the decomposition of material, which opens potential avenue for material recovery and zero waste products.-
Descrição: dc.descriptionSão Paulo State University - Unesp Faculty of Science and Technology (FCT) Physics Department-
Descrição: dc.descriptionBangor University School of Electronics Bangor, Wales-
Descrição: dc.descriptionUniversity of Glasgow James Watt School of Engineering-
Descrição: dc.descriptionSão Paulo State University - Unesp Faculty of Science and Technology (FCT) Physics Department-
Formato: dc.format1702-1709-
Idioma: dc.languageen-
Relação: dc.relationIEEE Transactions on Electron Devices-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectBiodegradable electronics-
Palavras-chave: dc.subjectmolybdenum (Mo)-
Palavras-chave: dc.subjectthin-film transistors (TFTs)-
Palavras-chave: dc.subjectzinc oxide (ZnO)-
Título: dc.titleZero Waste and Biodegradable Zinc Oxide Thin-Film Transistors for UV Sensors and Logic Circuits-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

Não existem arquivos associados a este item.