The enhanced n-butanol sensing performance of In2O3 loaded NiO cuboid heterostructure

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.contributorUniversidade de São Paulo (USP)-
Autor(es): dc.creatorPerrone, Olavo M.-
Autor(es): dc.creatorRoveda, Antonio C.-
Autor(es): dc.creatorde Moraes, Daniel A.-
Autor(es): dc.creatorVolanti, Diogo P.-
Data de aceite: dc.date.accessioned2025-08-21T18:00:53Z-
Data de disponibilização: dc.date.available2025-08-21T18:00:53Z-
Data de envio: dc.date.issued2023-07-29-
Data de envio: dc.date.issued2023-07-29-
Data de envio: dc.date.issued2023-01-04-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1016/j.jallcom.2022.167483-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/246096-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/246096-
Descrição: dc.descriptionMonitoring volatile organic compounds (VOCs) quickly and on-site is essential for preserving human health. The semiconductor gas sensor has been a promising strategy for detecting VOCs. However, stability, selectivity, and sensitivity are crucial for the practical application of a gas-sensor material. Innovative synthetic methods have been studied to improve the properties of sensor materials, such as better detection and stability and the construction of p-n heterojunction materials. In this work, NiO/In2O3 heterostructure was synthesized by fast microwave-assisted solvothermal (MAS) using nickel foam and indium nitrate and was studied as a gas sensor for detecting several VOCs. NiO/In2O3 has the combined properties of NiO, a p-type material, and of In2O3, an n-type. NiO/In2O3 presented a superior performance for detecting n-butanol at the ideal operating temperature (350 °C), with a fast response (6 s), good selectivity, and stability. The n-Butanol response at 100 ppm was Ra/Rg = 412 ± 16, and a linear detection range from 1 to 200 ppm was achieved. The best sensing response for this material towards n-butanol is attributed to the electron depletion layer caused by NiO/In2O3 junction and more adsorption sites obtained during fast MAS synthesis.-
Descrição: dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
Descrição: dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
Descrição: dc.descriptionLaboratory of Materials for Sustainability (LabMatSus) Ibilce São Paulo State University (Unesp), R. Cristóvão Colombo, 2265, SP-
Descrição: dc.descriptionSão Carlos Institute of Chemistry University of São Paulo, SP-
Descrição: dc.descriptionLaboratory of Materials for Sustainability (LabMatSus) Ibilce São Paulo State University (Unesp), R. Cristóvão Colombo, 2265, SP-
Descrição: dc.descriptionFAPESP: 2018/01258-5-
Descrição: dc.descriptionFAPESP: 2019/11058-6-
Descrição: dc.descriptionFAPESP: 2020/06421-1-
Descrição: dc.descriptionCNPq: 311453/2021-0-
Idioma: dc.languageen-
Relação: dc.relationJournal of Alloys and Compounds-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectGas sensor-
Palavras-chave: dc.subjectHeterojunction-
Palavras-chave: dc.subjectMicrowave synthesis-
Palavras-chave: dc.subjectNickel foam-
Palavras-chave: dc.subjectNiO/In2O3-
Palavras-chave: dc.subjectVolatile organic compounds-
Título: dc.titleThe enhanced n-butanol sensing performance of In2O3 loaded NiO cuboid heterostructure-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

Não existem arquivos associados a este item.