Influence of multiple conduction channels on MISHEMT's intrinsic voltage gain

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorCanales, Bruno G.-
Autor(es): dc.creatorAgopian, Paula G. D.-
Data de aceite: dc.date.accessioned2025-08-21T19:21:26Z-
Data de disponibilização: dc.date.available2025-08-21T19:21:26Z-
Data de envio: dc.date.issued2023-07-29-
Data de envio: dc.date.issued2023-07-29-
Data de envio: dc.date.issued2021-12-31-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/SBMICRO55822.2022.9880938-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/246011-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/246011-
Descrição: dc.descriptionThe influence of multiple channels of Si3N4/ AlGaN/ AlN/ GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor (MISHEMT) were analyzed focusing mainly on the transistor's analog performance. In order to better understand the contribution of each channel conduction, the gate length, source/drain electrodes depth and source/drain distance to the gate electrode were varied. The total drain current is composed by 3 different components, where two of them are related to HEMT conduction and one is related to MOS conduction. Due to their different nature and distance to the gate electrode, each channel conduction exhibits different threshold voltages, causing unusual transfer and output characteristics. As a result, the MISHEMTs present an unexpected increase in intrinsic voltage gain (Av) for higher gate bias (strong conduction). The HEMT conduction is responsible for sustaining drain current levels so high that it affects the Early voltage more strongly than the degradation of gD, ensuring a high Av value.-
Descrição: dc.descriptionUNESP São Paulo State University-
Descrição: dc.descriptionUNESP São Paulo State University-
Idioma: dc.languageen-
Relação: dc.relation36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectAlGaN-
Palavras-chave: dc.subjectAlN-
Palavras-chave: dc.subjectAnalog Parameters-
Palavras-chave: dc.subjectGaN-
Palavras-chave: dc.subjectIntrinsic Voltage Gain-
Palavras-chave: dc.subjectMISHEMT-
Palavras-chave: dc.subjectMultiple Channel-
Título: dc.titleInfluence of multiple conduction channels on MISHEMT's intrinsic voltage gain-
Tipo de arquivo: dc.typeaula digital-
Aparece nas coleções:Repositório Institucional - Unesp

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