Experimental Analysis of MISHEMT Multiple Conductions from 200K to 450K

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade de São Paulo (USP)-
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorPerina, Welder F.-
Autor(es): dc.creatorMartino, Joao A.-
Autor(es): dc.creatorAgopian, Paula G. D.-
Data de aceite: dc.date.accessioned2025-08-21T21:53:17Z-
Data de disponibilização: dc.date.available2025-08-21T21:53:17Z-
Data de envio: dc.date.issued2023-07-29-
Data de envio: dc.date.issued2023-07-29-
Data de envio: dc.date.issued2021-12-31-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/SBMICRO55822.2022.9881049-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/246008-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/246008-
Descrição: dc.descriptionIn this work, the multiple conductions of a GaN based Metal-Insulator-Semiconductor High Electron Mobility Transistor (MISHEMT) when operating in a temperature range from 200K to 450K are evaluated experimentally. It is observed that the threshold voltage decreases linearly with temperature from 200K to room temperature. For higher temperatures, there is a competition among the following effects: the bandgap narrowing, depletion depth and Fermi potential reductions, resulting in the increase of threshold voltage. The analysis of the subthreshold swing presents very high values indicating a harsh degradation. These behaviors are further investigated through the MISHEMT transconductance, which presents two different conduction mechanism (double peak) at 350 K for all channel lengths, affecting the total drain current.-
Descrição: dc.descriptionLSI/PSI/USP University of Sao Paulo-
Descrição: dc.descriptionUNESP Sao Paulo States University-
Descrição: dc.descriptionUNESP Sao Paulo States University-
Idioma: dc.languageen-
Relação: dc.relation36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectbasic parameters-
Palavras-chave: dc.subjectGaN-
Palavras-chave: dc.subjectheterostructure-
Palavras-chave: dc.subjectMISHEMT-
Palavras-chave: dc.subjecttemperature-
Título: dc.titleExperimental Analysis of MISHEMT Multiple Conductions from 200K to 450K-
Tipo de arquivo: dc.typeaula digital-
Aparece nas coleções:Repositório Institucional - Unesp

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