Uniaxially strained silicon influence on Two-stage Operational Transconductance Amplifiers designed with SOI FinFET's

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.contributorUniversidade de São Paulo (USP)-
Autor(es): dc.creatorRibeiro, Arllen D. R.-
Autor(es): dc.creatorAraujo, Gustavo V.-
Autor(es): dc.creatorMartino, Joao A.-
Autor(es): dc.creatorAgopian, Paula G. D.-
Data de aceite: dc.date.accessioned2025-08-21T18:42:54Z-
Data de disponibilização: dc.date.available2025-08-21T18:42:54Z-
Data de envio: dc.date.issued2023-07-29-
Data de envio: dc.date.issued2023-07-29-
Data de envio: dc.date.issued2021-12-31-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/SBMICRO55822.2022.9881005-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/246006-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/246006-
Descrição: dc.descriptionThis paper analyzes the influence of uniaxially strained silicon on two-stage operational transconductance amplifiers (OTA) designed with SOI FinFETs. The OTA is designed with unstrained and strained SOI FinFETs. The circuit design was performed using experimental FinFETs data through LookUp Table (LUT) and Verilog-A model. Two different strategies were evaluated for designing the OTA: the same current bias (Iss) and the same inversion condition (gm/IDS), In both strained designs, the mobility improvement thanks to mechanical stress is responsible for higher voltage gain and gain-bandwidth product. Between the strained designs, the one that consider the same current bias of the unstrained one presents a lower power consumption due to the lower drain current compared to the same inversion condition. In summary, the OTA performance increase when it is designed with strained FinFET's.-
Descrição: dc.descriptionUNESP Sao Paulo State University-
Descrição: dc.descriptionLSI/PSI/USP University of Sao Paulo-
Descrição: dc.descriptionUNESP Sao Paulo State University-
Idioma: dc.languageen-
Relação: dc.relation36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectFinFET-
Palavras-chave: dc.subjectMechanical Strain-
Palavras-chave: dc.subjectOperational Transconductance Amplifiers-
Título: dc.titleUniaxially strained silicon influence on Two-stage Operational Transconductance Amplifiers designed with SOI FinFET's-
Tipo de arquivo: dc.typeaula digital-
Aparece nas coleções:Repositório Institucional - Unesp

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