Temperature influence on Operational Transconductance Amplifier designed with triple gate TFET

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade de São Paulo (USP)-
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorCamargo, Raphael Gil-
Autor(es): dc.creatorMartino, Joao Antonio-
Autor(es): dc.creatorDer Agopian, Paula Ghedini-
Data de aceite: dc.date.accessioned2025-08-21T15:18:10Z-
Data de disponibilização: dc.date.available2025-08-21T15:18:10Z-
Data de envio: dc.date.issued2023-07-29-
Data de envio: dc.date.issued2023-07-29-
Data de envio: dc.date.issued2021-12-31-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/SBMICRO55822.2022.9880962-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/246004-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/246004-
Descrição: dc.descriptionThis paper presents the temperature influence on Operational Transconductance Amplifier (OTA) designed with triple gate Tunnel-FET (TFET). To simulate the OTA circuit, it was used the lookup table approach in Verilog-A language using experimental data at room temperature. The circuit was designed with TFET in inversion region with gm/ID value of 6V-1. The circuit analysis was conducted under the temperatures of 300K, 360K and 420K and it was verified the impact of using a current mirror bias circuit with or without thermal compensation. From the results it is possible to imply that the TFET transistors are very interesting for this kind of circuit due to that they have a very low power consumption and a high voltage gain when comparing to OTA using conventional MOS transistors. Another important observation is that by using a current bias circuit with temperature compensation, the total gain of the circuit slightly increases instead of decreasing with the higher temperature.-
Descrição: dc.descriptionLSI/PSI/USP University of Sao Paulo-
Descrição: dc.descriptionUNESP Sao Paulo State University-
Descrição: dc.descriptionUNESP Sao Paulo State University-
Idioma: dc.languageen-
Relação: dc.relation36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectAnalog amplifier-
Palavras-chave: dc.subjectOTA circuit-
Palavras-chave: dc.subjectTFET-
Palavras-chave: dc.subjectTFinFET-
Palavras-chave: dc.subjectThermal analysis-
Título: dc.titleTemperature influence on Operational Transconductance Amplifier designed with triple gate TFET-
Tipo de arquivo: dc.typeaula digital-
Aparece nas coleções:Repositório Institucional - Unesp

Não existem arquivos associados a este item.