Experimental behavior of Line-TFET applied to Low-Dropout Voltage Regulator

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade de São Paulo (USP)-
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorDe Lima Silva, Wenita-
Autor(es): dc.creatorDer Agopian, Paula Ghedini-
Autor(es): dc.creatorMartino, Joao Antonio-
Data de aceite: dc.date.accessioned2025-08-21T22:38:20Z-
Data de disponibilização: dc.date.available2025-08-21T22:38:20Z-
Data de envio: dc.date.issued2023-07-29-
Data de envio: dc.date.issued2023-07-29-
Data de envio: dc.date.issued2021-12-31-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/SBMICRO55822.2022.9881041-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/246001-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/246001-
Descrição: dc.descriptionThis work presents the design of Low Dropout Voltage Regulator (LDO) with Line-Tunnel Field Effect Transistor (Line-TFET), in which the transistor was modeled using Verilog-A and Lookup Table (LUT) obtained from experimental data. The LDO was designed with gm/ID of 9.6 V-1, a load current (IL) of 1 mA, source voltage (VDD) of 2.3 V and 500 mV of dropout voltage (VDO). For comparison, a MOSFET LDO was designed with 130 nm MOSFET PDK. Despite of the lower Gain-BandWidth Product (GBW), the Line-TFET LDO presents better results like 0.18 V/A of load regulation, 0.01 mV/V of line regulation thanks to its high loop gain with a 78% efficiency. Also, it was observed that Line-TFET LDO can be designed without the compensation capacitor to reach stability.-
Descrição: dc.descriptionUniversity of Sao Paulo LSI/PSI/USP-
Descrição: dc.descriptionUNESP Sao Paulo State University-
Descrição: dc.descriptionUNESP Sao Paulo State University-
Idioma: dc.languageen-
Relação: dc.relation36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectanalog circuit design-
Palavras-chave: dc.subjectgm/ID design-
Palavras-chave: dc.subjectLine-Tunnel FET-
Palavras-chave: dc.subjectLow-Dropout Voltage Regulator (LDO)-
Palavras-chave: dc.subjectTFET-
Título: dc.titleExperimental behavior of Line-TFET applied to Low-Dropout Voltage Regulator-
Tipo de arquivo: dc.typeaula digital-
Aparece nas coleções:Repositório Institucional - Unesp

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