Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade de São Paulo (USP)-
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorTolêdo, Rodrigo do Nascimento-
Autor(es): dc.creatorSilva, Wenita de Lima-
Autor(es): dc.creatorGonçalez Filho, Walter-
Autor(es): dc.creatorNogueira, Alexandro de Moraes-
Autor(es): dc.creatorMartino, Joao Antonio-
Autor(es): dc.creatorAgopian, Paula Ghedini Der-
Data de aceite: dc.date.accessioned2025-08-21T22:15:35Z-
Data de disponibilização: dc.date.available2025-08-21T22:15:35Z-
Data de envio: dc.date.issued2023-03-01-
Data de envio: dc.date.issued2023-03-01-
Data de envio: dc.date.issued2022-08-01-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1016/j.sse.2022.108328-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/239970-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/239970-
Descrição: dc.descriptionThis paper presents the comparison of Low-Dropout Voltage Regulators (LDOs) designed with Nanowire (NW-TFET) and Line Tunnel FET (Line-TFET), in which the transistors were modeled using Verilog-A and Lookup Tables (LUTs) obtained from experimental data. The LDOs were designed in two gm/ID, load currents and capacitances conditions: 7 V−1, 100 µA, 100 pF and 10.5 V−1, 10 µA, 10 pF. For comparison, a MOSFET LDO was designed with TSCM 0.18 µm PDK. It was observed that both TFET LDOs can be designed without the compensation capacitor to reach stability. The Line-TFET LDO delivers better specifications than the NW-TFET LDO, but with higher current consumption. Comparing with MOSFET LDO, both TFET LDOs present higher efficiency. The Line-TFET LDO showed higher loop gain and lower, but comparable, gain-bandwidth product (GBW) in both biases.-
Descrição: dc.descriptionLSI/PSI/USP University of Sao Paulo-
Descrição: dc.descriptionUNESP Sao Paulo State University-
Descrição: dc.descriptionUNESP Sao Paulo State University-
Idioma: dc.languageen-
Relação: dc.relationSolid-State Electronics-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectAnalog circuit design-
Palavras-chave: dc.subjectLine-TFET-
Palavras-chave: dc.subjectLow-dropout voltage regulator (LDO)-
Palavras-chave: dc.subjectNanowire-
Palavras-chave: dc.subjectTunnel FET (TFET)-
Título: dc.titleComparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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