High Temperature Influence on the Trade-off between gm/I-D and f(T) of nanosheet NMOS Transistors with Different Metal Gate Stack

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade de São Paulo (USP)-
Autor(es): dc.contributorIMEC-
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorSilva, Vanessa C. P.-
Autor(es): dc.creatorMartino, Joao A.-
Autor(es): dc.creatorSimoen, Eddy-
Autor(es): dc.creatorVeloso, Anabela-
Autor(es): dc.creatorAgopian, Paula G. D.-
Autor(es): dc.creatorIEEE-
Data de aceite: dc.date.accessioned2025-08-21T18:45:59Z-
Data de disponibilização: dc.date.available2025-08-21T18:45:59Z-
Data de envio: dc.date.issued2022-11-29-
Data de envio: dc.date.issued2022-11-29-
Data de envio: dc.date.issued2020-12-31-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/EuroSOI-ULIS53016.2021.9560185-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/237553-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/237553-
Descrição: dc.descriptionThis work presents an experimental analysis of the trade-off between transistor efficiency (gm/I-D) and unit gain frequency (f(T)) of nanosheet field effect transistors (NSFETs) with different metal gate (MG) stack, considering the influence of high temperature (T), until T=200 degrees C. The results are very promising for both MG stacks. The MG stack (n*) presents a high f(T) about 260 GHz (T=25 degrees C and L=28 nm) and a gm/I-D about 37 V-1 (T=25 degrees C and L=200 nm). The MG stack (m*) also presents very good characteristics, like a f(T) about 252 GHz (T=25 degrees C and L=28 nm) and a gm/In about 35 V-1 (T=25 degrees C and L=200 nm). From the analyses as a function of the inversion coefficient (IC), it was possible to determine that the optimal operation point occurs in the transition from moderate to strong inversion for L=28 nm and it is in strong inversion for long channel devices. In all cases, although the intrinsic voltage gain (Av) is degraded moving away from weak inversion, the degradation was not very pronounced up to the optimal operation point and considering the temperature variation, the Av presents a greater stability at the optimal point than in weak inversion.-
Descrição: dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
Descrição: dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)-
Descrição: dc.descriptionUniv Sao Paulo, LSI PSI USP, Sao Paulo, Brazil-
Descrição: dc.descriptionIMEC, Leuven, Belgium-
Descrição: dc.descriptionSao Paulo State Univ, UNESP, Sao Joao Da Boa Vista, Brazil-
Descrição: dc.descriptionSao Paulo State Univ, UNESP, Sao Joao Da Boa Vista, Brazil-
Formato: dc.format4-
Idioma: dc.languageen-
Publicador: dc.publisherIeee-
Relação: dc.relation2021 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis)-
???dc.source???: dc.sourceWeb of Science-
Palavras-chave: dc.subjectNanosheets (NS)-
Palavras-chave: dc.subjectMOSFET-
Palavras-chave: dc.subjectAnalog operation-
Palavras-chave: dc.subjectf(T)-
Palavras-chave: dc.subjectTransistor Efficiency-
Título: dc.titleHigh Temperature Influence on the Trade-off between gm/I-D and f(T) of nanosheet NMOS Transistors with Different Metal Gate Stack-
Tipo de arquivo: dc.typeaula digital-
Aparece nas coleções:Repositório Institucional - Unesp

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