Horizontal, Stacked or Vertical Silicon Nanowires: Does it Matter from a Low-Frequency Noise Perspective?

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorIMEC-
Autor(es): dc.contributorUTFPR-
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.contributorUniversidade de São Paulo (USP)-
Autor(es): dc.contributorKatholieke Univ Leuven-
Autor(es): dc.creatorSimoen, Eddy-
Autor(es): dc.creatorOliveira, Alberto Vinicius de-
Autor(es): dc.creatorDer Agopian, Paula Ghedini-
Autor(es): dc.creatorRitzenthaler, Romain-
Autor(es): dc.creatorMertens, Hans-
Autor(es): dc.creatorHoriguchi, Naoto-
Autor(es): dc.creatorMartino, Joao Antonio-
Autor(es): dc.creatorClaeys, Cor-
Autor(es): dc.creatorVeloso, Anabela-
Autor(es): dc.creatorIEEE-
Data de aceite: dc.date.accessioned2025-08-21T15:22:17Z-
Data de disponibilização: dc.date.available2025-08-21T15:22:17Z-
Data de envio: dc.date.issued2022-11-29-
Data de envio: dc.date.issued2022-11-29-
Data de envio: dc.date.issued2019-12-31-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/EUROSOI-ULIS49407.2020.9365338-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/237551-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/237551-
Descrição: dc.descriptionThis work reviews the low-frequency noise performance of different flavors of silicon Gate-All-Around Nanowire (NW) (or Nanosheet - NS) transistors. For the horizontal devices, the 1/f-like noise is dominated by the number fluctuations mechanism, so that the Power Spectral Density (PSD) is directly proportional with the trap density in the gate stack. The impact of different process options and device architectures (junctionless versus inversion mode) is discussed. Overall, it is found that the average 1/f noise PSD is reducing going from single NW transistors on Silicon-on-Insulator substrates, to stacked horizontal NS devices and, finally, vertical NW FETs. In the latter case, white noise may dominate the lowfrequency noise spectrum.-
Descrição: dc.descriptionIMEC, Kapeldreef 75, B-3001 Leuven, Belgium-
Descrição: dc.descriptionUTFPR, Campus Toledo, Toledo, Parana, Brazil-
Descrição: dc.descriptionSao Paulo State Univ, UNESP, Sao Joao Da Boa Vista, Brazil-
Descrição: dc.descriptionUniv Sao Paulo, LSI PSI USP, Sao Paulo, Brazil-
Descrição: dc.descriptionKatholieke Univ Leuven, EE Depart, Kasteelpk Arenberg 10, B-3001 Leuven, Belgium-
Descrição: dc.descriptionSao Paulo State Univ, UNESP, Sao Joao Da Boa Vista, Brazil-
Formato: dc.format6-
Idioma: dc.languageen-
Publicador: dc.publisherIeee-
Relação: dc.relation2020 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis)-
???dc.source???: dc.sourceWeb of Science-
Palavras-chave: dc.subjectGate-All-Around-
Palavras-chave: dc.subjectNanowires-
Palavras-chave: dc.subjectNanosheets-
Palavras-chave: dc.subjectLow-frequency noise-
Título: dc.titleHorizontal, Stacked or Vertical Silicon Nanowires: Does it Matter from a Low-Frequency Noise Perspective?-
Tipo de arquivo: dc.typeaula digital-
Aparece nas coleções:Repositório Institucional - Unesp

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