Characterization of Plasma-deposited a-C:H:Si:F:N Films

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorLopes, Juliana Feletto Silveira Costa-
Autor(es): dc.creatorDe Oliveira Furquim, Felipe-
Autor(es): dc.creatorRangel, Elidiane Cipriano-
Autor(es): dc.creatorDurrant, Steven F.-
Data de aceite: dc.date.accessioned2025-08-21T22:46:29Z-
Data de disponibilização: dc.date.available2025-08-21T22:46:29Z-
Data de envio: dc.date.issued2022-05-01-
Data de envio: dc.date.issued2022-05-01-
Data de envio: dc.date.issued2020-12-31-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1590/1980-5373-MR-2021-0016-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/233409-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/233409-
Descrição: dc.descriptionThin a-C:H:Si:F:N films were studied as a function of the partial pressure of SF6 in plasma feed, RSF, together with tetramethylsilane and N2. Deposition rates varied from ∼4 to ∼19 nm.min-1. Surface roughnesses were typically less than 35 nm. Surface contact angles with water droplets, measured using goniometry, were all around 90°. Scanning electron micrography revealed surface particles, probably formed in the gas phase, of typical diameters ∼8 μm. As revealed by Fourier transform infrared spectroscopy and energy dispersive x-ray spectroscopy, the films are plasma polymers with a carbon and silicon network. Most of the films contain ∼ 60 at.% C, ∼ 10 at.% Si, 20 at.% O and ∼5 to 14 at.% N. Film doping with F rises to ∼2 at.% as RSF is increased. The Tauc gap, calculated from ultraviolet-visible near infrared spectroscopic data, is controllable in the range of ∼3.5 to 4.1 eV by a suitable choice of RSF. Fluorination causes the films to be softer and less stiff. Total deformation and stored energies are reduced compared to those of the film deposited at RSF = 0%. The modulus of dissipation increases from ∼8% to a maximum of ∼65% for the fluorinated films.-
Descrição: dc.descriptionUniversidade Estadual Paulista Júlio de Mesquita Filho (UNESP) Instituto de Ciência e Tecnologia-
Descrição: dc.descriptionUniversidade Estadual Paulista Júlio de Mesquita Filho (UNESP) Instituto de Ciência e Tecnologia-
Idioma: dc.languageen-
Relação: dc.relationMaterials Research-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectA-C:H:Si:F:N-
Palavras-chave: dc.subjectOptical properties-
Palavras-chave: dc.subjectPECVD-
Palavras-chave: dc.subjectThin films-
Título: dc.titleCharacterization of Plasma-deposited a-C:H:Si:F:N Films-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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