Anomalous diode behavior of Cu2S/SnO2 p–n junction

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Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorLima, João V. M.-
Autor(es): dc.creatorSantos, Stevan B. O.-
Autor(es): dc.creatorSilva, Rafael A.-
Autor(es): dc.creatorBoratto, Miguel H.-
Autor(es): dc.creatorGraeff, Carlos F. O.-
Autor(es): dc.creatorScalvi, Luis V. A.-
Data de aceite: dc.date.accessioned2025-08-21T17:12:55Z-
Data de disponibilização: dc.date.available2025-08-21T17:12:55Z-
Data de envio: dc.date.issued2022-05-01-
Data de envio: dc.date.issued2022-05-01-
Data de envio: dc.date.issued2021-08-01-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1007/s10854-021-06703-x-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/233329-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/233329-
Descrição: dc.descriptionCu-doped SnO2 thin films present application as a gas sensor in H2S atmosphere, since the conductivity of SnO2 is increased due to the transformation of Cu into Cu2−xS. Based on this mechanism, a p–n Cu2S/SnO2 heterojunction is proposed and the electrical transport of this device is investigated. SnO2 thin films were obtained from the sol–gel by dip-coating technique, while Cu2S films were obtained from resistive evaporation. The formation of materials with low crystallinity and high disorder was analyzed by X-ray diffractograms and confirmed using optical absorption (Urbach’s energy.) The bandgaps of the materials were estimated from the Tauc plot to be 3.7 ± 0.1 eV for SnO2 and 2.5 ± 0.1 eV for Cu2S. Impedance spectroscopy measurements show an accumulation of charges in the material, which possibly occurs in the depletion layer region. In addition, it shows a charge release that can be associated with the leakage current in the device. I × V measurements show a surprising behavior, opposite to that expected for a diode, with the device conducting only under reverse bias. A model has been proposed to explain this effect considering minority charge transport and interfacial barriers formed between the materials.-
Descrição: dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
Descrição: dc.descriptionSchool of Sciences POSMAT - Post-Graduate Program in Materials Science and Technology São Paulo State University (UNESP)-
Descrição: dc.descriptionSchool of Sciences Department of Physics São Paulo State University (UNESP)-
Descrição: dc.descriptionSchool of Sciences POSMAT - Post-Graduate Program in Materials Science and Technology São Paulo State University (UNESP)-
Descrição: dc.descriptionSchool of Sciences Department of Physics São Paulo State University (UNESP)-
Descrição: dc.descriptionFAPESP: 2017/20809-0-
Descrição: dc.descriptionFAPESP: 2018/25241-4-
Descrição: dc.descriptionFAPESP: 2018/26039-4-
Formato: dc.format21804-21812-
Idioma: dc.languageen-
Relação: dc.relationJournal of Materials Science: Materials in Electronics-
???dc.source???: dc.sourceScopus-
Título: dc.titleAnomalous diode behavior of Cu2S/SnO2 p–n junction-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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