Charge-Pump Circuit in 65nm CMOS for Neural Stimulation on Deep-Brain Stimulation

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Autor(es): dc.contributorUniversidade de São Paulo (USP)-
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorNordi, Tiago Mateus-
Autor(es): dc.creatorBarbosa, V. M.-
Autor(es): dc.creatorGounella, R. H.-
Autor(es): dc.creatorAsan, Godfred-
Autor(es): dc.creatorLuppe, Maximiliam-
Autor(es): dc.creatorNavarro, Joao-
Autor(es): dc.creatorJunior, Soares-
Autor(es): dc.creatorCarmo, J. P.-
Autor(es): dc.creatorFonoff, Erich Talamoni-
Autor(es): dc.creatorColombari, Eduardo-
Data de aceite: dc.date.accessioned2025-08-21T21:27:10Z-
Data de disponibilização: dc.date.available2025-08-21T21:27:10Z-
Data de envio: dc.date.issued2022-04-29-
Data de envio: dc.date.issued2022-04-29-
Data de envio: dc.date.issued2020-12-31-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/DCIS53048.2021.9666166-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/231622-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/231622-
Descrição: dc.descriptionDeep-Brain Stimulation (DBS) is an emerging area to improve the life of patients with brain deceases and one with the most dynamic research towards implantable devices. This paper presents an electronic circuit to generate mild current pulses for application on Deep-Brain Stimulation (DBS). This circuit can generate current pulses with arbitrary shapes in the range of-514μA to +514μA, with a variable frequency up to at least 130Hz, and minimum pulse duration of 90μs. The simulations showed a power consumption of 1.7mW for currents with symmetric shapes and 1.2V. This circuit was designed in a low-power TSMC 65nm CMOS process, targeting implantable devices.-
Descrição: dc.descriptionUniversity of São Paulo (USP) Dept of Electrical Engineering (SEL), SP-
Descrição: dc.descriptionUniversity of São Paulo (USP) Faculty of Medicine Department of Neurology, SP-
Descrição: dc.descriptionSão Paulo State University (UNESP) Faculty of Odonthology Department of Physiology and Pathology, SP-
Descrição: dc.descriptionSão Paulo State University (UNESP) Faculty of Odonthology Department of Physiology and Pathology, SP-
Idioma: dc.languageen-
Relação: dc.relation36th Conference on Design of Circuits and Integrated Systems, DCIS 2021-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectCMOS-
Palavras-chave: dc.subjectDBS-
Palavras-chave: dc.subjectImplantable Devices-
Título: dc.titleCharge-Pump Circuit in 65nm CMOS for Neural Stimulation on Deep-Brain Stimulation-
Tipo de arquivo: dc.typeaula digital-
Aparece nas coleções:Repositório Institucional - Unesp

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