A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.contributorUniversidade Federal do Paraná (UFPR)-
Autor(es): dc.creatorNogueira, Gabriel L.-
Autor(es): dc.creatorVieira, Douglas H.-
Autor(es): dc.creatorMorais, Rogerio M.-
Autor(es): dc.creatorSerbena, Jose P. M.-
Autor(es): dc.creatorSeidel, Keli F.-
Autor(es): dc.creatorAlves, Neri-
Data de aceite: dc.date.accessioned2025-08-21T20:09:04Z-
Data de disponibilização: dc.date.available2025-08-21T20:09:04Z-
Data de envio: dc.date.issued2022-04-29-
Data de envio: dc.date.issued2022-04-29-
Data de envio: dc.date.issued2020-12-31-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/LED.2021.3120928-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/231538-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/231538-
Descrição: dc.descriptionFew works on solution-processed zinc oxide vertical transistors and electrolyte-gated transistors have shown the merits of both architectures. Here, we present an electrolyte-gated vertical field-effect transistor (EGVFET) based on a spray-deposited zinc oxide/silver nanowire (ZnO/AgNW) Schottky contact. The output curve shows that the device operates at a sub-1 V bias. Also, the electrolyte does not affect the diode cell, and the cyclic voltammetry of the capacitor cell does not indicate a faradic process between AgNW and the top-gate electrode. From the transfer curve, we extracted an ION/IOFF ratio of 104, an on-current density of 65.3 mA/cm2 and a normalized transconductance of 113.4 S/cm2. Our contribution places the ZnO-EGVFET structure on the front line to develop printed transistors without a high-resolution pattern.-
Descrição: dc.descriptionSão Paulo State University – UNESP, Faculty of Science and Technology (FCT), Physics Department, Presidente Prudente, SP, Brazil. (e-mail: leonardo.nogueira@unesp.br)-
Descrição: dc.descriptionSão Paulo State University – UNESP, Faculty of Science and Technology (FCT), Physics Department, Presidente Prudente, SP, Brazil.-
Descrição: dc.descriptionUniversidade Federal do Paraná – UFPR, Physics Department, Curitiba, PR, Brazil.-
Descrição: dc.descriptionUniversidade Tecnológica Federal Do Paraná – UTFPR, Physics Department, Curitiba, PR, Brazil.-
Idioma: dc.languageen-
Relação: dc.relationIEEE Electron Device Letters-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectField-effect transistor-
Palavras-chave: dc.subjectSchottky diode-
Palavras-chave: dc.subjectSpray-coating-
Palavras-chave: dc.subjectVertical electrolyte-gated transistor-
Título: dc.titleA sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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