A monolithic 0.35-μm SiGe Class e power amplifier designed at 1.9 GHz

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual de Campinas (UNICAMP)-
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorDos Santos, Antonio Jose S.-
Autor(es): dc.creatorMartins, Everson-
Data de aceite: dc.date.accessioned2025-08-21T17:52:51Z-
Data de disponibilização: dc.date.available2025-08-21T17:52:51Z-
Data de envio: dc.date.issued2022-04-29-
Data de envio: dc.date.issued2022-04-29-
Data de envio: dc.date.issued2013-11-18-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/IMOC.2013.6646488-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/227298-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/227298-
Descrição: dc.descriptionThis paper presents the design of a monolithic 1.9 GHz, Class E, power amplifier (PA) for wireless application with the main components on chip. A cascode topology is used to attenuate transistor stress and to increase the output power, although it compromises the efficiency due to the dissipative process caused by transistor parasitic capacitances. The proposed PA was developed in a single-ended topology because most of the existing components designed use this configuration. The PA was developed in a 0.35-μm SiGe BiCMOS technology with 3.3 Volts which delivers 20.9 dBm output power and 25.5% of power added efficiency (PAE). It also presents a bandwidth of 60 MHz which is suitable for GSM application. Some considerations about the layout are also discussed. © 2013 IEEE.-
Descrição: dc.descriptionCCS UNICAMP, Campinas-
Descrição: dc.descriptionControl Engineering and Automation UNESP - São Paulo State University, Sorocaba-
Descrição: dc.descriptionControl Engineering and Automation UNESP - São Paulo State University, Sorocaba-
Idioma: dc.languageen-
Relação: dc.relationSBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectClass E-
Palavras-chave: dc.subjectlow power-
Palavras-chave: dc.subjectoutput power-
Palavras-chave: dc.subjectpower added efficiency (PAE)-
Palavras-chave: dc.subjectPower amplifier (PA)-
Palavras-chave: dc.subjectswitching mode-
Palavras-chave: dc.subjecttransistor stress-
Palavras-chave: dc.subjectwireless-
Título: dc.titleA monolithic 0.35-μm SiGe Class e power amplifier designed at 1.9 GHz-
Tipo de arquivo: dc.typeaula digital-
Aparece nas coleções:Repositório Institucional - Unesp

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