Evaluation of bulk and surfaces absorption edge energy of sol-gel-dip-coating SnO2 thin films

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Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.contributorUniversidade Federal de Minas Gerais (UFMG)-
Autor(es): dc.creatorFloriano, Emerson Aparecido-
Autor(es): dc.creatorDe Andrade Scalvi, Luis Vicente-
Autor(es): dc.creatorSambrano, Julio Ricardo-
Autor(es): dc.creatorGeraldo, Viviany-
Data de aceite: dc.date.accessioned2025-08-21T15:29:22Z-
Data de disponibilização: dc.date.available2025-08-21T15:29:22Z-
Data de envio: dc.date.issued2022-04-28-
Data de envio: dc.date.issued2022-04-28-
Data de envio: dc.date.issued2010-10-01-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1590/S1516-14392010000400004-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/226216-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/226216-
Descrição: dc.descriptionThe absorption edge and the bandgap transition of sol-gel-dip-coating SnO2 thin films, deposited on quartz substrates, are evaluated from optical absorption data and temperature dependent photoconductivity spectra. Structural properties of these films help the interpretation of bandgap transition nature, since the obtained nanosized dimensions of crystallites are determinant on dominant growth direction and, thus, absorption energy. Electronic properties of the bulk and (110) and (101) surfaces are also presented, calculated by means of density functional theory applied to periodic calculations at B3LYP hybrid functional level. Experimentally obtained absorption edge is compared to the calculated energy band diagrams of bulk and (110) and (101) surfaces. The overall calculated electronic properties in conjunction with structural and electro-optical experimental data suggest that the nature of the bandgap transition is related to a combined effect of bulk and (101) surface, which presents direct bandgap transition.-
Descrição: dc.descriptionAdvanced Materials Group and Defects in Semiconductors and Insulators Group State University of São Paulo - UNESP, CP 473, CEP 17033-360, Bauru, São Paulo-
Descrição: dc.descriptionDepartment of Physics - FC State University of São Paulo - UNESP, CP 473, CEP 17033-360, Bauru, São Paulo-
Descrição: dc.descriptionModeling and Molecular Simulation Group - DM / FC State University of São Paulo - UNESP, CP 473, CEP 17033-360, Bauru, São Paulo-
Descrição: dc.descriptionLaboratory of Nanomaterials Federal University of Minas Gerais - UFMG, CEP 31270-901, Belo Horizonte, MG-
Descrição: dc.descriptionAdvanced Materials Group and Defects in Semiconductors and Insulators Group State University of São Paulo - UNESP, CP 473, CEP 17033-360, Bauru, São Paulo-
Descrição: dc.descriptionDepartment of Physics - FC State University of São Paulo - UNESP, CP 473, CEP 17033-360, Bauru, São Paulo-
Descrição: dc.descriptionModeling and Molecular Simulation Group - DM / FC State University of São Paulo - UNESP, CP 473, CEP 17033-360, Bauru, São Paulo-
Formato: dc.format437-443-
Idioma: dc.languageen-
Relação: dc.relationMaterials Research-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectElectronic structure-
Palavras-chave: dc.subjectOptical absorption-
Palavras-chave: dc.subjectSol-gel-
Palavras-chave: dc.subjectThin flms-
Palavras-chave: dc.subjectTin dioxide-
Título: dc.titleEvaluation of bulk and surfaces absorption edge energy of sol-gel-dip-coating SnO2 thin films-
Tipo de arquivo: dc.typelivro digital-
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