Numerical analysis of pulsing regimes near static borders of optically injected semiconductor lasers

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorTecnologico de Monterrey-
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorRodriguez, Sergio-
Autor(es): dc.creatorCampuzano, Gabriel-
Autor(es): dc.creatorAldaya, Ivan-
Autor(es): dc.creatorCastañón, Gerardo-
Data de aceite: dc.date.accessioned2025-08-21T22:49:52Z-
Data de disponibilização: dc.date.available2025-08-21T22:49:52Z-
Data de envio: dc.date.issued2022-04-28-
Data de envio: dc.date.issued2022-04-28-
Data de envio: dc.date.issued2022-04-01-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1364/AO.452938-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/223720-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/223720-
Descrição: dc.descriptionIt is well known that semiconductor lasers under optical injection present rich, dynamic behavior. In this paper, we focus on pulsing regimes, which can be either exploited in a broad variety of applications or lead to undesired instabilities. In particular, we develop a multi-metric method to automatically identify pulsing regimes in the parameter space.We apply this method to extensive numerical simulations to show that these regimes occur in the vicinity of the static synchronization boundary. Furthermore, analyzing these pulsing regimes, we identify pulsations with repetition rates ranging from several megahertz up to more than 1 GHz. Finally, we analyze the effect of the linewidth enhancement factor and the slave-laser bias current, revealing that a linewidth enhancement factor of 3 and a higher bias current lead to broader regions of pulsation regimes.-
Descrição: dc.descriptionSchool of Engineering and Sciences Tecnologico de Monterrey, E. Garza Sada 2501 Sur, Nuevo Leon-
Descrição: dc.descriptionCenter for Advanced and Sustainable Technologies Sao Paulo State University (UNESP), Sao Joao da Boa Vista, SP-
Descrição: dc.descriptionCenter for Advanced and Sustainable Technologies Sao Paulo State University (UNESP), Sao Joao da Boa Vista, SP-
Formato: dc.format2634-2642-
Idioma: dc.languageen-
Relação: dc.relationApplied Optics-
???dc.source???: dc.sourceScopus-
Título: dc.titleNumerical analysis of pulsing regimes near static borders of optically injected semiconductor lasers-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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