The conduction mechanisms analysis of AlGaN/GaN MOSHEMTs with different source/drain electrode configurations

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorCanales, Bruno G.-
Autor(es): dc.creatorCarmo, Genilson J.-
Autor(es): dc.creatorAgopian, Paula G. D.-
Data de aceite: dc.date.accessioned2025-08-21T23:13:32Z-
Data de disponibilização: dc.date.available2025-08-21T23:13:32Z-
Data de envio: dc.date.issued2022-04-28-
Data de envio: dc.date.issued2022-04-28-
Data de envio: dc.date.issued2020-12-31-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/SBMicro50945.2021.9585769-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/223616-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/223616-
Descrição: dc.descriptionIn this work, an Al2O3/AlGaN/AlN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT) is analyzed and the investigation of its conduction mechanisms is carried out considering different gate to source and gate to drain distances, as well as different source and drain contact depths. The devices can have up to 3 conduction channels, of which two of them are related to the 2DEG formation and one of them depends on field effect on MOS structure. While the HEMT conduction is more influenced by the source and drain contacts depth, the MOS conduction seems to be more affected by the gate to source and gate to drain distances. Each of these conductions influence the total drain current in a different way.-
Descrição: dc.descriptionSao Paulo State University Unesp, Sao Joao da Boa Vista-
Descrição: dc.descriptionSao Paulo State University Unesp, Sao Joao da Boa Vista-
Idioma: dc.languageen-
Relação: dc.relationSBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subject2deg-
Palavras-chave: dc.subjectAlgan-
Palavras-chave: dc.subjectAln-
Palavras-chave: dc.subjectDouble conduction mechanisms-
Palavras-chave: dc.subjectMoshemt-
Título: dc.titleThe conduction mechanisms analysis of AlGaN/GaN MOSHEMTs with different source/drain electrode configurations-
Tipo de arquivo: dc.typeaula digital-
Aparece nas coleções:Repositório Institucional - Unesp

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