Design of a Gate-All-Around Stacked Nanosheet Differential Amplifier under Different Bias Conditions

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade de São Paulo (USP)-
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorSousa, Jùlia C. S.-
Autor(es): dc.creatorPerina, Welder F.-
Autor(es): dc.creatorMartino, Joao A.-
Autor(es): dc.creatorAgopian, Paula G. D.-
Data de aceite: dc.date.accessioned2025-08-21T21:00:50Z-
Data de disponibilização: dc.date.available2025-08-21T21:00:50Z-
Data de envio: dc.date.issued2022-04-28-
Data de envio: dc.date.issued2022-04-28-
Data de envio: dc.date.issued2020-12-31-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/SBMicro50945.2021.9585744-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/223612-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/223612-
Descrição: dc.descriptionThis paper presents the DC design of a differential amplifier, an important building block on analog and mixed signal designs, utilizing the Verilog-A approach on Gate-All- Around Nanosheet (GAA-NSH) devices. The GAA-NSH is a device with two stacked silicon sheets in which the gate fully surrounds the channel, presenting the best electrostatic coupling possible for MOS technologies. The device has a 104nm effective width while having a physical width of only 15nm. The differential amplifier was designed with a VDD of 2.1V and input common mode of 1.4V, while biased in different inversion regions with gm/ID values of 5 V-1, 8 V-1 and 11 V-1. The gm/ID = 8V-1 project was compared against a FinFET differential amplifier project, showing an improvement of gain and transconductance while occupying less physical area. Higher efficiency projects (gm/ID= 11 V-1) present a higher gain while decreasing current consumption.-
Descrição: dc.descriptionUniversity of Sao Paulo LSI/PSI/USP-
Descrição: dc.descriptionSao Paulo State University Unesp, Sao Joao da Boa Vista-
Descrição: dc.descriptionSao Paulo State University Unesp, Sao Joao da Boa Vista-
Idioma: dc.languageen-
Relação: dc.relationSBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectCircuit design-
Palavras-chave: dc.subjectDifferential pair-
Palavras-chave: dc.subjectGate-all-around nanosheet-
Título: dc.titleDesign of a Gate-All-Around Stacked Nanosheet Differential Amplifier under Different Bias Conditions-
Tipo de arquivo: dc.typeaula digital-
Aparece nas coleções:Repositório Institucional - Unesp

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