Detection of H2facilitated by ionic liquid gating of tungsten oxide films

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Autor(es): dc.contributorUniversidade Federal de Goiás (UFG)-
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.contributorPolytechnique Montréal-
Autor(es): dc.creatorBarbosa, Martin S.-
Autor(es): dc.creatorDa Silva, Ranilson A.-
Autor(es): dc.creatorSantato, Clara-
Autor(es): dc.creatorOrlandi, Marcelo O.-
Data de aceite: dc.date.accessioned2025-08-21T23:29:22Z-
Data de disponibilização: dc.date.available2025-08-21T23:29:22Z-
Data de envio: dc.date.issued2022-04-28-
Data de envio: dc.date.issued2022-04-28-
Data de envio: dc.date.issued2021-12-31-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1116/6.0001405-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/222998-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/222998-
Descrição: dc.descriptionMolecular hydrogen (H2) shows promise as a future renewable energy carrier. However, due to safety concerns, its reliable detection in different atmospheres is an important issue. Here, we propose a hydrogen sensor based on ion-gated transistors exploiting the interface between tungsten oxide and ionic liquids. Two different approaches to gas sensors (metal oxide gas sensor and ionic liquid-based electrochemical sensor) are integrated in a single device. We demonstrate that ionic liquid gating enhances the effect of H2 on the tungsten oxide transistor channel. The transistor current response permits the detection of H2 in an O2-free environment with the device operating in room temperature. After H2 sensing, the initial properties of the tungsten oxide channel can be recovered by exposure to O2.-
Descrição: dc.descriptionInstituto de Química Universidade Federal de Goiás (UFG), Av. Esperança, s/n - Chácaras de Recreio Samambaia, Goiânia-
Descrição: dc.descriptionDepartamento de Física Engenharia e Matemática São Paulo State University (UNESP), Rua Professor Degni, 55-
Descrição: dc.descriptionDépartement de Génie Physique Polytechnique Montréal, C.P. 6079, Succ. Centre-Ville-
Descrição: dc.descriptionDepartamento de Física Engenharia e Matemática São Paulo State University (UNESP), Rua Professor Degni, 55-
Idioma: dc.languageen-
Relação: dc.relationJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films-
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Título: dc.titleDetection of H2facilitated by ionic liquid gating of tungsten oxide films-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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