Application of Taguchi arrays using DOE for optimizing processing and understanding sputtered coated ZnO TFTs

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorBharat Institute of Engineering and Technology-
Autor(es): dc.contributorBangor University-
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.contributorUniversity of Glasgow-
Autor(es): dc.creatorKumar, Dinesh-
Autor(es): dc.creatorGomes, Tiago [UNESP]-
Autor(es): dc.creatorMisra, Neeraj Kumar-
Autor(es): dc.creatorSahu, Anil Kumar-
Autor(es): dc.creatorKettle, J.-
Data de aceite: dc.date.accessioned2022-08-04T22:11:50Z-
Data de disponibilização: dc.date.available2022-08-04T22:11:50Z-
Data de envio: dc.date.issued2022-04-28-
Data de envio: dc.date.issued2022-04-28-
Data de envio: dc.date.issued2020-12-31-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1016/j.matpr.2021.02.710-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/222227-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/222227-
Descrição: dc.descriptionThis study applies the Taguchi orthogonal array (OA) to improve and optimize the performance of ZnO thin-film transistors (TFT). Radiofrequency (RF) sputtering method was used to deposit the active layer of TFTs. The annealing temperature, environmental conditions, sputter rate, and thin-film thickness were the parameters whose impact on output parameters like mobility was analyzed in the process optimization using design of experiment (DOE). The ZnO TFTs show state-of-the-art performance features, including high saturation mobility (0.83c), high Ion/Ioffratio (104). The optimal configuration was found to be high annealing temperature 450 °C under N2atmosphere, low sputter rate. This paper presents a method that can empower the fast optimization of metal oxide TFTs for future developments in the manufacturing process. If a full factorial design had been implemented, 64 tests would have been necessary, however in this work, we have reduced the number of tests to 9 only using Taguchi method.-
Descrição: dc.descriptionDepartment of Electronics and Communication Engineering Bharat Institute of Engineering and Technology, Telangana-
Descrição: dc.descriptionSchool of Electronics Bangor University, Bangor-
Descrição: dc.descriptionSão Paulo State University (Unesp) Institute of Geosciences and Exact Sciences-
Descrição: dc.descriptionJames Watt School of Engineering University of Glasgow-
Descrição: dc.descriptionSão Paulo State University (Unesp) Institute of Geosciences and Exact Sciences-
Formato: dc.format5757-5760-
Idioma: dc.languageen-
Relação: dc.relationMaterials Today: Proceedings-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectMetal oxide-
Palavras-chave: dc.subjectMobility-
Palavras-chave: dc.subjectOptimization-
Palavras-chave: dc.subjectTaguchi Orthogonal Array (OA)-
Palavras-chave: dc.subjectZnO TFTs-
Título: dc.titleApplication of Taguchi arrays using DOE for optimizing processing and understanding sputtered coated ZnO TFTs-
Aparece nas coleções:Repositório Institucional - Unesp

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