Room-Temperature Negative Differential Resistance in Surface-Supported Metal-Organic Framework Vertical Heterojunctions

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorBrazilian Center for Research in Energy and Materials (CNPEM)-
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.contributorUniversidade Federal do ABC (UFABC)-
Autor(es): dc.contributorUniversidade Estadual de Campinas (UNICAMP)-
Autor(es): dc.contributorKarlsruhe Institute of Technology (KIT)-
Autor(es): dc.creatorAlbano, Luiz G. S.-
Autor(es): dc.creatorde Camargo, Davi H. S. [UNESP]-
Autor(es): dc.creatorSchleder, Gabriel R.-
Autor(es): dc.creatorDeeke, Samantha G. [UNESP]-
Autor(es): dc.creatorVello, Tatiana P.-
Autor(es): dc.creatorPalermo, Leirson D.-
Autor(es): dc.creatorCorrêa, Cátia C.-
Autor(es): dc.creatorFazzio, Adalberto-
Autor(es): dc.creatorWöll, Christof-
Autor(es): dc.creatorBufon, Carlos C. B. [UNESP]-
Data de aceite: dc.date.accessioned2022-08-04T22:10:34Z-
Data de disponibilização: dc.date.available2022-08-04T22:10:34Z-
Data de envio: dc.date.issued2022-04-28-
Data de envio: dc.date.issued2022-04-28-
Data de envio: dc.date.issued2021-09-01-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1002/smll.202101475-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/222015-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/222015-
Descrição: dc.descriptionThe advances of surface-supported metal-organic framework (SURMOF) thin-film synthesis have provided a novel strategy for effectively integrating metal-organic framework (MOF) structures into electronic devices. The considerable potential of SURMOFs for electronics results from their low cost, high versatility, and good mechanical flexibility. Here, the first observation of room-temperature negative differential resistance (NDR) in SURMOF vertical heterojunctions is reported. By employing the rolled-up nanomembrane approach, highly porous sub-15 nm thick HKUST-1 films are integrated into a functional device. The NDR is tailored by precisely controlling the relative humidity (RH) around the device and the applied electric field. The peak-to-valley current ratio (PVCR) of about two is obtained for low voltages (<2 V). A transition from a metastable state to a field emission-like tunneling is responsible for the NDR effect. The results are interpreted through band diagram analysis, density functional theory (DFT) calculations, and ab initio molecular dynamics simulations for quasisaturated water conditions. Furthermore, a low-voltage ternary inverter as a multivalued logic (MVL) application is demonstrated. These findings point out new advances in employing unprecedented physical effects in SURMOF heterojunctions, projecting these hybrid structures toward the future generation of scalable functional devices.-
Descrição: dc.descriptionAlexander von Humboldt-Stiftung-
Descrição: dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)-
Descrição: dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
Descrição: dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
Descrição: dc.descriptionBrazilian Nanotechnology National Laboratory (LNNano) Brazilian Center for Research in Energy and Materials (CNPEM)-
Descrição: dc.descriptionPostgraduate Program in Materials Science and Technology (POSMAT) São Paulo State University (UNESP)-
Descrição: dc.descriptionFederal University of ABC (UFABC)-
Descrição: dc.descriptionDepartment of Physical Chemistry Institute of Chemistry (IQ) University of Campinas (UNICAMP)-
Descrição: dc.descriptionInstitute of Functional Interfaces (IFG) Karlsruhe Institute of Technology (KIT)-
Descrição: dc.descriptionPostgraduate Program in Materials Science and Technology (POSMAT) São Paulo State University (UNESP)-
Descrição: dc.descriptionFAPESP: 2014/25979-2-
Descrição: dc.descriptionFAPESP: 2014/50906-9-
Descrição: dc.descriptionFAPESP: 2016/25346-5-
Descrição: dc.descriptionFAPESP: 2017/02317-2-
Descrição: dc.descriptionFAPESP: 2017/18139--
Descrição: dc.descriptionFAPESP: 2017/25553-3-
Descrição: dc.descriptionFAPESP: 2019/01561-2-
Descrição: dc.descriptionCNPq: 408770/2018-0-
Descrição: dc.descriptionFAPESP: 6-
Idioma: dc.languageen-
Relação: dc.relationSmall-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectmetal-organic frameworks-
Palavras-chave: dc.subjectmultivalued logic applications-
Palavras-chave: dc.subjectnegative differential resistance-
Palavras-chave: dc.subjectSURMOF diodes-
Palavras-chave: dc.subjectternary inverters-
Título: dc.titleRoom-Temperature Negative Differential Resistance in Surface-Supported Metal-Organic Framework Vertical Heterojunctions-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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