Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.contributorCommun. and Electron. Eng.-
Autor(es): dc.contributorIMEC-
Autor(es): dc.contributorVrije Universiteit Brussels-
Autor(es): dc.creatorGlória Caño de Andrade, Maria [UNESP]-
Autor(es): dc.creatorFelipe de Oliveira Bergamim, Luis [UNESP]-
Autor(es): dc.creatorBaptista Júnior, Braz [UNESP]-
Autor(es): dc.creatorRoberto Nogueira, Carlos [UNESP]-
Autor(es): dc.creatorAlex da Silva, Fábio [UNESP]-
Autor(es): dc.creatorTakakura, Kenichiro-
Autor(es): dc.creatorParvais, Bertrand-
Autor(es): dc.creatorSimoen, Eddy-
Data de aceite: dc.date.accessioned2022-08-04T22:09:59Z-
Data de disponibilização: dc.date.available2022-08-04T22:09:59Z-
Data de envio: dc.date.issued2022-04-28-
Data de envio: dc.date.issued2022-04-28-
Data de envio: dc.date.issued2021-09-01-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1016/j.sse.2021.108050-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/221845-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/221845-
Descrição: dc.descriptionIn this paper, the noise Power Spectral Density (PSD) of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) has been experimentally investigated in linear operation (VD = 50 mV) for different channel lengths (L) and widths (W) at different temperatures (5.32 °C till 100 °C). The origin of the noise will be analyzed to understand the physical mechanisms involved. It is shown that the Low-Frequency (LF) noise is dominated by 1/f noise, originating from number fluctuations. Additionally, in shorter devices, a higher 1/f noise PSD is found. The LF noise characteristics indicate that the AlGaN/GaN HEMTs on silicon substrates can be a promising candidate for analog and Radio Frequency applications (RF).-
Descrição: dc.descriptionSão Paulo State University (UNESP) Institute of Science and Technology, Av. 3 de Março, n. 511-
Descrição: dc.descriptionNational Inst. of Technol. Kumamoto College Depart. of Information Commun. and Electron. Eng., 2659-2 Suya, Koshi-
Descrição: dc.descriptionIMEC, Kapeldreef 75-
Descrição: dc.descriptionVrije Universiteit Brussels, Pleinlaan 2-
Descrição: dc.descriptionSão Paulo State University (UNESP) Institute of Science and Technology, Av. 3 de Março, n. 511-
Idioma: dc.languageen-
Relação: dc.relationSolid-State Electronics-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectGaN/AlGaN-
Palavras-chave: dc.subjectHEMT-
Palavras-chave: dc.subjectHigh-temperature-
Palavras-chave: dc.subjectLow-frequency noise-
Título: dc.titleLow-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

Não existem arquivos associados a este item.