Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorImec-
Autor(es): dc.contributorUniversidade Tecnológica Federal do Paraná-
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.contributorUniversidade de São Paulo (USP)-
Autor(es): dc.contributorEE Depart. KU Leuven-
Autor(es): dc.creatorSimoen, Eddy-
Autor(es): dc.creatorde Oliveira, Alberto Vinicius-
Autor(es): dc.creatorAgopian, Paula Ghedini Der [UNESP]-
Autor(es): dc.creatorRitzenthaler, Romain-
Autor(es): dc.creatorMertens, Hans-
Autor(es): dc.creatorHoriguchi, Naoto-
Autor(es): dc.creatorMartino, Joao Antonio-
Autor(es): dc.creatorClaeys, Cor-
Autor(es): dc.creatorVeloso, Anabela-
Data de aceite: dc.date.accessioned2022-08-04T22:09:59Z-
Data de disponibilização: dc.date.available2022-08-04T22:09:59Z-
Data de envio: dc.date.issued2022-04-28-
Data de envio: dc.date.issued2022-04-28-
Data de envio: dc.date.issued2021-10-01-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1016/j.sse.2021.108087-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/221842-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/221842-
Descrição: dc.descriptionThe low frequency noise performance of Gate-All-Around Nanowire (NW) or Nanosheet (NS) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is investigated, taking account of the impact of the device architecture, i.e., junctionless (JL) versus inversion-mode (IM) and process variations for the gate metal. The horizontal devices are characterized by 1/f noise, dominated by the number fluctuation mechanism, so that the power spectral density (PSD) is directly proportional with the trap density in the gate stack. The average 1/f noise PSD is becoming smaller going from single NW transistors on Silicon-on-Insulator substrates, to stacked horizontal NS devices on bulk silicon and, finally, vertical NWFETs with a substrate source contact. At low currents and frequencies below 1 kHz the 1/f noise in the vertical NWs is, in contrast to the horizontal devices, controlled by mobility fluctuations. In these devices white noise is observed above 1 kHz.-
Descrição: dc.descriptionImec, Kapeldreef 75-
Descrição: dc.descriptionUniversidade Tecnológica Federal do Paraná-
Descrição: dc.descriptionUNESP Sao Paulo State University-
Descrição: dc.descriptionLSI/PSI/USP University of Sao Paulo-
Descrição: dc.descriptionEE Depart. KU Leuven, Kasteelpark Arenberg 10-
Descrição: dc.descriptionUNESP Sao Paulo State University-
Idioma: dc.languageen-
Relação: dc.relationSolid-State Electronics-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectGate-All-Around-
Palavras-chave: dc.subjectLow-frequency noise-
Palavras-chave: dc.subjectNanosheets-
Palavras-chave: dc.subjectNanowires-
Palavras-chave: dc.subjectSilicon MOSFETs-
Título: dc.titleLow frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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