OPPOSITE TRENDS BETWEEN DIGITAL AND ANALOG PERFORMANCE FOR DIFFERENT TFET TECHNOLOGIES

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Autor(es): dc.contributorUniversidade de São Paulo (USP)-
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.contributorIMEC-
Autor(es): dc.contributorKatholieke Univ Leuven-
Autor(es): dc.creatorAgopian, P. G. D. [UNESP]-
Autor(es): dc.creatorBordallo, C.-
Autor(es): dc.creatorMartino, J. A.-
Autor(es): dc.creatorRooyackers, R.-
Autor(es): dc.creatorSimoen, E.-
Autor(es): dc.creatorCollaert, N.-
Autor(es): dc.creatorClaeys, C.-
Autor(es): dc.creatorHuang, R.-
Autor(es): dc.creatorWu, H.-
Autor(es): dc.creatorLin, Q.-
Autor(es): dc.creatorLiang, S.-
Autor(es): dc.creatorSong, P. L.-
Autor(es): dc.creatorGuo, Z.-
Autor(es): dc.creatorLai, K.-
Autor(es): dc.creatorZhang, Y.-
Autor(es): dc.creatorWang, Y.-
Autor(es): dc.creatorShi, Y.-
Autor(es): dc.creatorLung, H. L.-
Data de aceite: dc.date.accessioned2022-08-04T21:57:50Z-
Data de disponibilização: dc.date.available2022-08-04T21:57:50Z-
Data de envio: dc.date.issued2022-04-28-
Data de envio: dc.date.issued2022-04-28-
Data de envio: dc.date.issued2018-01-01-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/218327-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/218327-
Descrição: dc.descriptionDifferent Tunnel-FET technologies are analyzed in terms of digital and analog figures of merit. The digital figure of merit used was the subthreshold swing (SS), while the analog parameter was the intrinsic voltage gain (AV). In the early technologies based on silicon TFET devices, the SS was much higher than the ideal behavior. However, the Av was very good, reaching a value up to 80 dB. The opposite trends were observed for up to date technologies based on III-V materials, where the SS finally reaches values down to 60 mV/dec while the AV degrades to 32 dB. The explanation is related to the predominant conduction mechanism. In the III-V TFETs, Band to Band (B2B) Tunneling is the predominant mechanism, which is more sensible to the drain electric field, increasing the output conductance and degrading the AV. In the silicon based TFETs the Trap-Assisted-Tunneling (TAT) is the predominant mechanism, which is less dependent on the drain electric field, resulting in a better AV.-
Descrição: dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
Descrição: dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
Descrição: dc.descriptionimec's Logic Device Program and its Core Partners-
Descrição: dc.descriptionUniv Sao Paulo, LSI PSI USP, Sao Paulo, Brazil-
Descrição: dc.descriptionSao Paulo State Univ, UNESP, Campus Sao Joao da Boa Vista, Sao Paulo, Brazil-
Descrição: dc.descriptionIMEC, Leuven, Belgium-
Descrição: dc.descriptionKatholieke Univ Leuven, EE Dept, Leuven, Belgium-
Descrição: dc.descriptionSao Paulo State Univ, UNESP, Campus Sao Joao da Boa Vista, Sao Paulo, Brazil-
Formato: dc.format4-
Idioma: dc.languageen-
Publicador: dc.publisherIeee-
Relação: dc.relation2018 China Semiconductor Technology International Conference (cstic)-
???dc.source???: dc.sourceWeb of Science-
Palavras-chave: dc.subjectTFET-
Palavras-chave: dc.subjectgeometries-
Palavras-chave: dc.subjectnew materials-
Palavras-chave: dc.subjectdigital and analog performance-
Título: dc.titleOPPOSITE TRENDS BETWEEN DIGITAL AND ANALOG PERFORMANCE FOR DIFFERENT TFET TECHNOLOGIES-
Aparece nas coleções:Repositório Institucional - Unesp

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