Electrical characterisation of beta-Ga2O3 Schottky diode for deep UV sensor applications

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorBangor Univ-
Autor(es): dc.contributorUniversidade Estadual Paulista (Unesp)-
Autor(es): dc.contributorSwansea Univ-
Autor(es): dc.creatorVieira, Douglas H.-
Autor(es): dc.creatorBadiei, Nafiseh-
Autor(es): dc.creatorEvans, Jonathan E.-
Autor(es): dc.creatorAlves, Neri-
Autor(es): dc.creatorKettle, Jeff-
Autor(es): dc.creatorLi, Lijie-
Autor(es): dc.creatorIEEE-
Data de aceite: dc.date.accessioned2022-02-22T00:59:25Z-
Data de disponibilização: dc.date.available2022-02-22T00:59:25Z-
Data de envio: dc.date.issued2021-06-25-
Data de envio: dc.date.issued2021-06-25-
Data de envio: dc.date.issued2019-12-31-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/210291-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/210291-
Descrição: dc.descriptionbeta-Ga2O3 is a promising semiconductor for electronic devices. In the present work we have demonstrated a novel method for manufacturing a beta-Ga2O3 Schottky diode, in which the same electrode material is used for both contacts. The device is tested it for its applicability in deep UV sensing. Devices were manufactured directly onto beta-Ga2O3 (010) wafer material. From the perspective of diode performance, a high rectification ratio of 1.5x10(7) and high forward current of 17.58 mA/cm(2) at -5 V bias was obtained. A responsivity of 12.5 mA/W was recorded when irradiated with light possessing a wavelength of 254 nm. Importantly, detailed analysis is conducted in order to evaluate the performance of the Schottky diode using Cheung's and Norde's methods allowing for accurate calculation of the Schottky barrier height in this device.-
Descrição: dc.descriptionSolar Photovoltaic Academic Research Consortium II (SPARC II) project - WEFO-
Descrição: dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
Descrição: dc.descriptionPrograma de Pos-Graduacao em Ciencia e Tecnologia de Materiais (POSMAT)-
Descrição: dc.descriptionBangor Univ, Sch Elect Engn, Bangor, Gwynedd, Wales-
Descrição: dc.descriptionUNESP Sao Paulo State Univ, Dept Phys, Presidente Prudente, Brazil-
Descrição: dc.descriptionSwansea Univ, Coll Engn, Multidisciplinary Nanotechnol Ctr, Swansea, W Glam, Wales-
Descrição: dc.descriptionUNESP Sao Paulo State Univ, Dept Phys, Presidente Prudente, Brazil-
Descrição: dc.descriptionFAPESP: 2019/14366-3-
Formato: dc.format4-
Idioma: dc.languageen-
Publicador: dc.publisherIeee-
Relação: dc.relation2020 Ieee Sensors-
???dc.source???: dc.sourceWeb of Science-
Palavras-chave: dc.subjectSchottky diode-
Palavras-chave: dc.subjectbeta-Ga2O3-
Palavras-chave: dc.subjectdeep UV-
Palavras-chave: dc.subjectplanar diode-
Título: dc.titleElectrical characterisation of beta-Ga2O3 Schottky diode for deep UV sensor applications-
Aparece nas coleções:Repositório Institucional - Unesp

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