Analog Linearization of Resistance Temperature Detectors (RTD) Using the Intrinsic Curvature of BandGap Voltage References

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorParana Fed Univ Technol-
Autor(es): dc.contributorUniversidade Estadual Paulista (Unesp)-
Autor(es): dc.contributorUniversidade Estadual de Campinas (UNICAMP)-
Autor(es): dc.creatorCarvalhaes-Dias, P.-
Autor(es): dc.creatorFerreira, I. P.-
Autor(es): dc.creatorOliveira Morais, F. J. [UNESP]-
Autor(es): dc.creatorCaparroz Duarte, L. F.-
Autor(es): dc.creatorSiqueira Dias, J. A.-
Autor(es): dc.creatorYurish, S. Y.-
Data de aceite: dc.date.accessioned2022-02-22T00:56:33Z-
Data de disponibilização: dc.date.available2022-02-22T00:56:33Z-
Data de envio: dc.date.issued2021-06-25-
Data de envio: dc.date.issued2021-06-25-
Data de envio: dc.date.issued2018-01-01-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/209444-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/209444-
Descrição: dc.descriptionAlthough resistance temperature detectors (RTD) are more linear than thermocouples, they present second and third order non-linearities, and a linear signal processing circuit which converts the voltage on a Pt-100 RTD to an output voltage with 10 mV/degrees C presents a maximum non-linearity error of 1.07 degrees C (10.7 mV) in the 0 to 85 degrees C temperature range. Although these non-linearities can be corrected digitally, there are cases where a simple analog linearization can be used with advantages. In this work we present an analog linearization technique that uses the output of a conventional Brokaw bandgap cell as the reference voltage of a differential instrumentation amplifier. The intrinsic curvature of the bandgap voltage reference, caused by the non-linear variation with temperature of the VBE of a transistor, creates a compensation voltage that can reduce the non-linearity of the signal processing circuit by one order of magnitude (down to approximately 0.14 degrees C) in the same temperature range.-
Descrição: dc.descriptionParana Fed Univ Technol, Av Alberto Carazzai, BR-1640 Cornelio Procopio, PR, Brazil-
Descrição: dc.descriptionUNESP, Fac Sci & Engn, RD Costa Lopes 780, Tupa, SP, Brazil-
Descrição: dc.descriptionSch Elect & Comp Engn Unicamp, Dept Semicond Instrumentat & Photon, Av Albert Einstein 400, Campinas, SP, Brazil-
Descrição: dc.descriptionUNESP, Fac Sci & Engn, RD Costa Lopes 780, Tupa, SP, Brazil-
Formato: dc.format68-71-
Idioma: dc.languageen-
Publicador: dc.publisherInt Frequency Sensor Assoc-ifsa-
Relação: dc.relationSensors And Electronic Instrumentation Advances (seia'2018)-
???dc.source???: dc.sourceWeb of Science-
Palavras-chave: dc.subjectRTD-
Palavras-chave: dc.subjectBandgap curvature-
Palavras-chave: dc.subjectBrokaw cell-
Palavras-chave: dc.subjectLinearization-
Palavras-chave: dc.subjectTemperature sensors-
Título: dc.titleAnalog Linearization of Resistance Temperature Detectors (RTD) Using the Intrinsic Curvature of BandGap Voltage References-
Aparece nas coleções:Repositório Institucional - Unesp

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