Analog performance of GaN/AlGaN high-electron-mobility transistors

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (Unesp)-
Autor(es): dc.contributorimec-
Autor(es): dc.contributorVrije Universiteit Brussels-
Autor(es): dc.creatorde Oliveira Bergamim, Luis Felipe [UNESP]-
Autor(es): dc.creatorParvais, Bertrand-
Autor(es): dc.creatorSimoen, Eddy-
Autor(es): dc.creatorCaño de Andrade, Maria Glória [UNESP]-
Data de aceite: dc.date.accessioned2022-02-22T00:54:15Z-
Data de disponibilização: dc.date.available2022-02-22T00:54:15Z-
Data de envio: dc.date.issued2021-06-25-
Data de envio: dc.date.issued2021-06-25-
Data de envio: dc.date.issued2021-09-01-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1016/j.sse.2021.108048-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/208727-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/208727-
Descrição: dc.descriptionIn this paper, the analog properties of advanced GaN/AlGaN High-Electron-Mobility Transistors (HEMTs) are studied as a function of temperature (T). The drain current, the threshold voltage, the transconductance and the output conductance are experimentally investigated under saturation operation. Moreover, important figures of merit for the analog performance, such as transconductance-over-drain current, Early voltage and intrinsic voltage gain are analyzed for different channel lengths in the temperature range of 25 °C till 200 °C. The results indicate that due to change in the Fermi potential, the analog parameters reduce with increasing T. Furthermore, the performance increase for longer channel devices is correlated directly with the lower drain electric field penetration.-
Descrição: dc.descriptionSão Paulo State University (UNESP) Institute of Science and Technology, Av. 3 de Março, n. 511-
Descrição: dc.descriptionimec, Kapeldreef 75-
Descrição: dc.descriptionVrije Universiteit Brussels, Pleinlaan 2-
Descrição: dc.descriptionSão Paulo State University (UNESP) Institute of Science and Technology, Av. 3 de Março, n. 511-
Idioma: dc.languageen-
Relação: dc.relationSolid-State Electronics-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectAnalog performance-
Palavras-chave: dc.subjectGaN/AlGaN-
Palavras-chave: dc.subjectHEMT-
Palavras-chave: dc.subjectHigh temperature-
Título: dc.titleAnalog performance of GaN/AlGaN high-electron-mobility transistors-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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